Results 81 to 90 of about 66,270 (345)

1.2 kV Pin Diodes with SiCrystal Epiwafer

open access: yesMaterials Science Forum, 2007
Silicon carbide devices limitations often originate from the quality of the substrate material. Therefore it is interesting to investigate devices fabricated on alternative source materials. Currently, CREE is the world market leader of SiC wafers. Nowadays, some new companies begin to propose alternative material.
Vang, Heu   +8 more
openaire   +2 more sources

In Situ Regenerative Adduct Assisted p‐Type Doping of Organic Semiconductor

open access: yesAdvanced Materials, EarlyView.
An in situ regenerative adduct‐assisted (IRAA) doping strategy is introduced for p‐type doping of organic semiconductors. A regenerating adduct serves as the dopant, enabling highly efficient doping with a choice of counterions. The generality of this approach provides a scalable route to dope a wide range of hole‐transport materials with high thermal ...
Brijesh K. Patel   +8 more
wiley   +1 more source

Development of High-FOM SiC PiN Diodes

open access: yesKongzhi Yu Xinxi Jishu, 2016
Based on Silvaco simulations, it obtained an optimized structure design of 3 300 V SiC PiN diode and developed SiC etching process and ohmic contact process.
WU Jia   +3 more
doaj  

Exploring the Potential of Zero‐Dimensional Carbon Nanomaterials in Photoluminescent, Electrochemiluminescent and Electrochemical Sensors

open access: yesAdvanced Materials Interfaces, EarlyView.
Zero‐dimensional carbon nanomaterials are presented as multifunctional platforms linking structure, property, and sensing performance. Surface engineering and heteroatom doping modulate electron‐transfer and luminescent behavior, enabling electrochemical, photoluminescent, and electrochemiluminescent detection. Fundamental design principles, analytical
Gustavo Martins   +8 more
wiley   +1 more source

Solid state neutron dosimeter for space applications [PDF]

open access: yes
Personnel engaged in space flight are exposed to significant flux of high energy neutrons arising from both primary and secondary sources of ionizing radiation.
Entine, Gerald   +2 more
core   +1 more source

Full-Duplex Systems Using Multi-Reconfigurable Antennas

open access: yes, 2014
Full-duplex systems are expected to achieve 100% rate improvement over half-duplex systems if the self-interference signal can be significantly mitigated. In this paper, we propose the first full-duplex system utilizing Multi-Reconfigurable Antenna (MRA)
Ahmed, Elsayed   +3 more
core   +1 more source

Advances in Halide Perovskites for Photon Radiation Detectors

open access: yesAdvanced Materials Technologies, EarlyView.
This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang   +3 more
wiley   +1 more source

The measurement of harmonics produced by a pin diode in a microwave switching application Final report [PDF]

open access: yes
Measurement of harmonics produced by a pin diode in microwave ...
Mc Quiddy, D. N., Mott, H.
core   +1 more source

Ratemeter [PDF]

open access: yes, 1973
An instantaneous reading tachometer in which reoccurring events to be measured in rate, trigger a threestate timing generator in which the first two states are of fixed duration and the third state is of variable duration is described.
Currie, J. R., Kissell, R. R.
core   +1 more source

Processing and characterization of epitaxial GaAs radiation detectors

open access: yes, 2015
GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 $\mu\textrm{m}$ - 130 $\mu\textrm{m ...
Arsenovich, T.   +14 more
core   +1 more source

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