Results 71 to 80 of about 43,625 (354)

Resonant Domain Wall Dynamics in a Three‐Dimensional Magnetic Nano Double Helix

Advanced Materials, EarlyView.
3D magnetic nanostructures promise exciting possibilities for magnetization dynamics. However, experimental realizations remain scarce. In nanoprinted cobalt double helices, time‐resolved X‐ray microscopy reveals harmonic domain wall dynamics. Simulations identify the mode and additional higher‐frequency resonances, revealing a rich dynamic landscape ...
Pamela Morales‐Fernández, Iason Konstantinos‐Douveas, Claas Abert, Elina Zhakina, Sandra Ruiz‐Gómez, Claudia Fernández‐González, Luke Alexander Turnbull, Sebastian Wintz, Markus König, Simone Finizio, Markus Weigand, Naëmi Leo, Dieter Suess, Aurelio Hierro‐Rodríguez, Amalio Fernández‐Pacheco, Claire Donnelly   +15 more
wiley   +1 more source

A Compact Frequency Reconfigurable Antenna for LTE Mobile Handset Applications

International Journal of Antennas and Propagation, 2015
A compact (8 × 62 × 5 mm3; 2.48 cc) frequency reconfigurable antenna that uses electrical switching with PIN diodes is proposed for the low frequency LTE band (699 MHz–862 MHz), high frequency LTE band (2496 MHz–2690 MHz), GSM850/900 bands (824 MHz–960 ...
Munyong Choi, Hyunho Wi, Byeonggwi Mun, Yonghyun Yoon, Hyunwoo Lee, Byungje Lee   +5 more
doaj   +1 more source

Experimental Characterization of 2 × 2 Electronically Reconfigurable Polarization Converter Unit Cells at X-Band

International Journal of Antennas and Propagation, 2021
In this paper, an electronically reconfigurable polarization converter unit cell operating at X-band is proposed. The polarization converter unit cell consists of a passive patch, a phase shifter, and an active patch.
Biswarup Rana, In-Gon Lee, Ic-Pyo Hong
doaj   +1 more source

Heavy and light hole minority carrier transport properties in low-doped n-InGaAs lattice matched to InP

, 2017
Minority carrier diffusion lengths in low-doped n-InGaAs using InP/InGaAs double-heterostructures are reported using a simple electrical technique. The contributions from heavy and light holes are also extracted using this methodology, including minority
Denhoff, Mike W., Walker, Alexandre W.
core   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

Development of a Pin Diode-Based Beam-Switching Single-Layer Reflectarray Antenna

International Journal of Antennas and Propagation, 2020
This paper presents a practical demonstration for the design and development of a switchable planar reflectarray using PIN diodes in the X-band frequency range.
Muhammad Inam Abbasi, Muhammad Yusof Ismail, Muhammad Ramlee Kamarudin   +2 more
doaj   +1 more source

Single-, Dual- and Triple-band Frequency Reconfigurable Antenna [PDF]

, 2014
The paper presents a frequency reconfigurable slot dipole antenna. The antenna is capable of being switched between single-band, dual-band or triple-band operation.
Hamid, M. R., Idris, I. H., Jamaluddin, M. H., Kelly, J. R., Majid, H. A., Rahim, M. K. A.   +5 more
core   +1 more source

Amplitude to phase conversion of InGaAs pin photo-diodes for femtosecond lasers microwave signal generation

, 2011
When a photo-diode is illuminated by a pulse train from a femtosecond laser, it generates microwaves components at the harmonics of the repetition rate within its bandwidth.
A. Bartels, A. Joshi, A.D. Ludlow, B. Lorbeer, D. Kuhl, D.R. Leibrandt, E.N. Ivanov, E.N. Ivanov, G. Santarelli, J. Kim, J. Kim, J. Kim, J. Millo, J. Millo, J. Millo, J. Taylor, J.J. McFerran, K. Wu, K.J. Williams, M. Dentan, M. Lours, M.A. Preciato, M.S. Kirchner, R. Holzwarth, S. Min, S. Seidelin, S. Weyers, S.A. Webster, T. Li, T. Steinmetz, T.M. Fortier, T.M. Ramond, W. Zhang, W. Zhang, W. Zhang, Y. Le Coq, Y.Y. Jiang   +36 more
core   +3 more sources

1.2 kV Pin Diodes with SiCrystal Epiwafer

Materials Science Forum, 2007
Silicon carbide devices limitations often originate from the quality of the substrate material. Therefore it is interesting to investigate devices fabricated on alternative source materials. Currently, CREE is the world market leader of SiC wafers. Nowadays, some new companies begin to propose alternative material.
Vang, Heu, Raynaud, Christophe, Brosselard, Pierre, Lazar, Mihai, Cremillieu, Pierre, Leclercq, Jean -Louis, Scharnholz, Sigo, Planson, Dominique, Chante, Jean-Pierre   +8 more
openaire   +2 more sources

In Situ Regenerative Adduct Assisted p‐Type Doping of Organic Semiconductor

Advanced Materials, EarlyView.
An in situ regenerative adduct‐assisted (IRAA) doping strategy is introduced for p‐type doping of organic semiconductors. A regenerating adduct serves as the dopant, enabling highly efficient doping with a choice of counterions. The generality of this approach provides a scalable route to dope a wide range of hole‐transport materials with high thermal ...
Brijesh K. Patel, Arya Vidhan, Shubham Gupta, Vaishali Arunachalam, Simantini Nayak, Neeraj Bhatt, Ravi Shankar Singh, Shaibal K. Sarkar, Pabitra K. Nayak   +8 more
wiley   +1 more source