Results 1 to 10 of about 8,259 (312)
Reverse Recovery of 50 V Silicon Charge Plasma PIN Diode [PDF]
IEEE Access, 2020 In this article, a novel approach is used for the first time to design a high-voltage PIN diode without any chemical doping process of cathode and anode region.
Stephen Bayne, Sara Hahmady
exaly +4 more sources
PROGRAMMING 2-BIT PIN DIODE IN SYNOPSYS TCAD [PDF]
Известия высших учебных заведений России: Радиоэлектроника, 2018 The article is devoted to the modeling of a two-bit pin-diode. The possibility of programming opening time of the device based on the pin-diode is shown. The design consisting of a pin diode and two floating gates on the surface of i-region is considered.
Alexander A. Danilenko +6 more
doaj +3 more sources
A Study of Reverse Characteristics of GaN-on-Si Quasi-Vertical PiN Diode with Beveled Sidewall and Fluorine Plasma Treatment [PDF]
MicromachinesIn this work, we show a high-performance GaN-on-Si quasi-vertical PiN diode based on the combination of beveled sidewall and fluorine plasma treatment (BSFP) by an inductively coupled plasma (ICP) system.
Fuchun Jia +11 more
doaj +2 more sources
Investigation of the nonlinearity of PIN diode on frequency reconfigurable patch antenna
Journal of Engineering, 2023 In this work, the nonlinearity of PIN diode on frequency reconfigurable patch antenna is investigated. To perform frequency reconfiguration, the proposed design makes use of the switching capabilities of a PIN diode.
Umar Musa
exaly +2 more sources
A Trench Heterojunction Diode-Integrated 4H-SiC LDMOS with Enhanced Reverse Recovery Characteristics [PDF]
MicromachinesIn this paper, a novel 4H-SiC LDMOS structure with a trench heterojunction in the source (referred as to THD-LDMOS) is proposed and investigated for the first time, to enhance the reverse recovery performance of its parasitic diode. Compared with 4H-SiC,
Yanjuan Liu, Fangfei Bai, Junpeng Fang
doaj +2 more sources
Power Limiter with PIN Diode Embedded in Cavity to Minimize Parasitic Inductance [PDF]
Journal of Electromagnetic Engineering and Science, 2022 This letter introduces a power limiter that limits the input power to protect the receiver when a large power enters the radio frequency receiver. When the power limiter receives a large power signal, a positive-intrinsic-negative (PIN) diode is turned ...
Dong Yun Jung +6 more
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Design of an Absorptive High-Power PIN Diode Switch for an Ultra-Wideband Radar
IEEE Journal of Microwaves, 2022 This paper details the development of a low-loss, PIN diode single-pole double-throw (SPDT) absorptive switch for an ultra-wideband radar. The fabricated switch operates with a peak power of 200 watts at a 10% duty cycle.
Deepak Elluru +7 more
doaj +1 more source
Nantong Daxue xuebao. Ziran kexue ban, 2022 As the third generation of wide band gap semiconductor material, SiC has high critical electric field, high thermal conductivity and other characteristics, and the PIN power diode devices made from this material can meet the requirements of high pressure,
CHEN Hongfu; WANG Yijin; YU Yanwei; CHEN Zhipeng; HE Jiacheng; GAO Zijian; LUO Man; YU Chenhui
doaj +1 more source
Scientific Reports, 2022 Positive-intrinsic-negative (PIN) limiters are widely used to protect sensitive components from leakage power itself and adjacent high-power injection. Being the core of a PIN limiter, the PIN diode is possible to be burnt out by the external microwave ...
Jingtao Zhao +6 more
doaj +1 more source
DESIGN OF NEW COMPOUND RECONFIGURABLE MICROSTRIP ANTENNA FOR C AND KU BANDS APPLICATIONS
Journal of Engineering and Sustainable Development, 2023 A compound reconfigurable microstrip antenna has been analyzed and designed using switching a PIN diode to switch between different modes of operating frequencies as well as radiation pattern directions.
Mushreq Al-Tamimi, Raad Hamdan Thaher
doaj +1 more source