Results 101 to 110 of about 63,691 (255)

Study the Effect of Fuel Pressure on the Operating and Phases Parameters For PF400J Dense Plasma Focus Device

open access: yesIbn Al-Haitham Journal for Pure and Applied Sciences, 2017
Theoretical calculations are achieved to study the effect of different deuterium pressures on various characteristics parameters for PF400J plasma focus using an international computer code.
R. H. Majeed, M. K. Jassim, F. M. Hady
doaj  

Evaluation of electron/ion sources effect and number of shots on Fe-Ta thin films using plasma focus device

open access: yesJournal of Materials Science: Materials in Engineering
The primary objective of this study was to employ the plasma focus (PF) technique to synthesize iron-tantalum (Fe-Ta) thin films while mitigating the reduction of iron content.
ArezooSadat EbneRasool   +2 more
doaj   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

open access: yesAdvanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon   +9 more
wiley   +1 more source

Estimation of Amount of Scattered Neutrons at Devices PFZ and GIT-12 by MCNP Simulations

open access: yesActa Polytechnica, 2013
Our work is dedicated to pinch effect occurring during current discharge in deuterium plasma, and our results are connected with two devices – plasma focus PFZ, situated in the Faculty of Electrical Engineering, CTU, Prague, and Z-pinch GIT-12, which is ...
Ondrej Šíla   +5 more
doaj  

Tunable Complementary Doping Strategy Enables High‐Performance Homo‐Channel CMOS in Monolayer WSe2

open access: yesAdvanced Functional Materials, EarlyView.
Polarity‐selective modulation enables a homo‐channel WSe2 CMOS platform from a single 2D semiconductor. MoOx and AlN tune WSe2 toward p‐ and n‐type operation, respectively, yielding complementary FETs and inverters with balanced switching, high voltage gain, low static power, and promising scalability for 2D logic integration.
Kuan‐Hsiang Chiu   +7 more
wiley   +1 more source

Preparations for pB11 tests in the FF-2B dense plasma focus

open access: yesFrontiers in Physics
The dense plasma focus (DPF) device has great potential as a fusion energy generator using hydrogen-boron (pB11) fuel1. Experiments using deuterium have already demonstrated mean ion energies >200 keV, in the range needed for burning pB112.
Eric J. Lerner, Syed M. Hassan
doaj   +1 more source

Nanodiamond Sensing in Dynamic Environments With Fast‐Tracking Through Four‐Point Positioning

open access: yesAdvanced Functional Materials, EarlyView.
A four‐point positioning tracking (4PPT) platform enables fast 3D feedback translational tracking of fluorescent nanodiamonds while simultaneously recording ODMR spectra. By integrating real‐time translational tracking with quantum sensing, mobile nanodiamonds are used for in‐situ nanothermometry, nanorheometry, and 6D translation–rotation tracking in ...
Guoli Zhu   +10 more
wiley   +1 more source

Ultrafast Thermal Shock Synthesis of CuNiSnLa Medium‐Entropy Metallic Glass for Sustainable Nitrogen Fixation via Plasma‐Coupled Electrocatalysis

open access: yesAdvanced Functional Materials, EarlyView.
This work introduces an ultrafast thermal shock strategy to synthesize a CuNiSnLa medium‐entropy metallic glass (MEMG). The rapid heating and cooling process generates a robust, highly active catalyst for electrocatalytic nitrate reduction to ammonia (NRA).
Hongbo Chen   +7 more
wiley   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park   +12 more
wiley   +1 more source

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