Results 111 to 120 of about 63,691 (255)
Advanced Functional Materials, EarlyView.A meniscus‐guided microtransfer molding strategy enables scalable fabrication of grid‐type molecular martensite films with b‐axis‐correlated preferential texture. Sequential growth across microchannel intersections creates structurally continuous grids and robust thermoelastic actuation (∼11% strain, > 50 cycles, maximum force density: 7.1 × 109 N m−3).
Sooyeon Ra +15 more
wiley +1 more source
The Orbitron: A crossed-field device for co-confinement of high energy ions and electrons
AIP AdvancesTo explore the confinement of high-energy ions above the space charge limit, we have developed a hybrid magnetic and electrostatic confinement device called an Orbitron.
M. Affolter +10 more
doaj +1 more source
Tailored Diketopyrrolopyrrole Derivatives for Efficient Deep‐Red Organic Lasers
Advanced Functional Materials, EarlyView.Tailored diketopyrrolopyrrole derivatives exhibit high stable amplified spontaneous emission with single or dual bands. Incorporated into distributed‐feedback lasers based on one‐ and two‐dimensional dichromated‐gelatin diffractive gratings, these materials provide a robust, flexible platform for integrated organic deep‐red light sources. ABSTRACT Deep‐
Pablo Pasqués‐Gramage +10 more
wiley +1 more source
3D Hydrodynamic Flow Lithography
Advanced Functional Materials, EarlyView.ABSTRACT Continuous‐ and stop‐flow lithography are widely used to fabricate multi‐dimensional microstructures whose cross‐sectional morphology is dictated by the flow profile of multiple co‐flowing streams. Here, we introduce three‐dimensional hydrodynamic flow lithography (3D HFL), a platform for programmable generation of multi‐layered flow profiles ...
Yiying Zou +5 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Using nanobeam photoemission, we demonstrate imaging of the in‐plane and out‐of‐plane electric field landscape within a metal–semiconductor van der Waals heterostructure. We provide evidence for Schottky barrier formation that depends on the semiconductor thickness. ABSTRACT Achieving high‐performance optoelectronic devices based on two‐dimensional van
Dario Mastrippolito +17 more
wiley +1 more source
Advanced Functional Materials, EarlyView.A dynamically actuated reconfigurable topographical surface (DARTS) integrates contact‐mediated bactericidal nanotopography with programmable mechanical actuation to actively disrupt bacterial biofilms. Dynamic surface reconfiguration enhances bacterial killing and suppresses implant‐associated infections in vivo, providing a new strategy for active ...
Mohammad Asadi Tokmedash +4 more
wiley +1 more source
Boosting Conversion Efficiency in Zn3P2/InP Solar Cells Via Nanoscale Junction Engineering
Advanced Functional Materials, EarlyView.This study demonstrates the efficacy of selective area epitaxy (SAE) in enhancing the conversion efficiency of a Zn3P2${\rm Zn}_3{\rm P}_2$/InP heterojunction solar cell. The impact of the SAE pattern dimensions on the performance parameters is investigated. Small size opening limits Jsc because of current crowding whereas large size opening limits Voc
Raphael Lemerle +14 more
wiley +1 more source
Advanced Functional Materials, EarlyView.In this work, we use direct ink writing (DIW) to 3D print Bi2Te3‐based materials and naturally induce hierarchical functional nanostructures, which reduced the lattice thermal conductivity by half, resulting in high zT of 0.87and 0.89 in p‐type and n‐type compounds, respectively, competitive with commercial materials.
Liangwei Hu +12 more
wiley +1 more source
مجلة جامعة دمشق للعلوم الأساسيةUsing Lee model code (RADPFV5.16FIB), numerical experiments on deuteron beams properties emitted from five Dense Plasma Focus (DPF) devices (PF1000, TAMU, UNU-ICTP, NX2T, PF400) were performed and compared with each other at low- and high-pressures in a
abdaljalil Muheialdeen altarabulsi +2 more
doaj
Domain Engineering and Anisotropic Domain‐Wall Photovoltaic Effects in Ferroelectric SnS
Advanced Functional Materials, EarlyView.The bulk photovoltaic effect at domain walls in the in‐plane ferroelectric 2D semiconductor SnS is investigated using periodic domain structures. Unlike conventional oxide ferroelectrics, domain walls of SnS do not contribute to photocurrent generation perpendicular to the domain walls.
Ryo Nanae +17 more
wiley +1 more source