Results 251 to 260 of about 123,048 (297)

Electromagnetic plasma models for microwave plasma cavity reactors

17th Fluid Dynamics, Plasma Dynamics, and Lasers Conference, 1984
A procedure used to design cavity applicators that efficiently produce cylindrical and disk microwave discharges is reviewed. In contrast to most microwave applicators these cavities utilize single mode excitation of the plasma. This method of excitation has the advantage of providing efficient coupling (zero reflected power) to the plasma over a wide ...
L. FRASCH, J. ASMUSSEN
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Plasma Reactor Modeling

2000
Plans to introduce pilot lines for 300 mm processing are in progress. The IC technology is simultaneously moving towards 0.18 µm and 0.15 µm linewidths. The convergence of these two trends places unprecedented stringent demands on processes and equipments. The challenges faced by equipment manufacturers are enormous.
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Planar reactor plasma etching with barrel reactor power supply

Review of Scientific Instruments, 1985
A very simple and inexpensive method of converting a barrel plasma etching system into a planar system is described. Details of structure and operating characteristics of the planar reaction chamber are shown.
C. S. Setzer, R. J. Mattauch
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Plasma Photoresist Stripping in a Planar Reactor

Physica Status Solidi (a), 1981
Stripping of different types of photoresist in O2 plasma in a planar reactor is investigated. Data are presented on the dependence of the stripping rate on the O2 pressure, temperature, and power density. Also, contamination by residues from the photoresist layer is discussed. Es wird die Abtragung von verschiedenen Photoresisttypen im O2-Plasma
A. Szekeres, K. Kirov, S. Alexandrova
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Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

Review of Scientific Instruments, 2015
A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of
S. Hamann, K. Börner, I. Burlacov, H.-J. Spies, M. Strämke, S. Strämke, J. Röpcke   +6 more
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Novel reactors for plasma applications

Chemical Engineering Science, 1990
Abstract With the availability of efficient and reliable torches for thermal plasma generation, industrial interest has turned to the design of novel reactors capable of taking full advantage of this new energy source. This effort has resulted in a wide variety of designs, depending on the applications.
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Plasma abatement of perfluorocompounds in inductively coupled plasma reactors

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2000
Perfluorinated compounds (PFCs), gases which have large global warming potentials, are widely used in plasma processing for etching and chamber cleaning. Due to underutilization of the feedstock gases or by-product generation, the effluents from plasma tools using these gases typically have large mole fractions of PFCs.
Xudong “Peter” Xu, Shahid Rauf, Mark J. Kushner   +2 more
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Processing Plasmas and Reactors

1995
In our discussion of the fundamental characteristics of plasmas, we did not place emphasis on the means of generating and sustaining the plasma. Nor did we consider the proper confinement of the plasma and the reactants, or the optimization of the plasma in order to produce a solid film on the substrate. In this chapter we will address these issues and
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Electronegative Plasma Reactor Engineering

2004
Low pressure (0.1 mtorr to 10 torr), cold (gas temperature ∼500 K), weakly ionized (degree of ionization 10−6-10−1) glow discharge plasmas are used extensively in the processing of electronic materials, especially for etching and deposition of thin films1. Such plasmas also find application in surface modification (e.g., hardening, corrosion resistance)
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Effect of plasma processing reactor circuitry on plasma characteristics

IEEE Conference Record - Abstracts. 1997 IEEE International Conference on Plasma Science, 2002
Summary form only given. It is well know that external circuitry greatly influences the performance of plasma processing reactors. Simulation of external circuits difficult since the time in which the external circuit attains the steady-state is several orders of magnitude longer than typical plasma simulation time scales.
S. Rauf, M.J. Kushner
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