Results 1 to 10 of about 78,217 (266)

Low-temperature poly-Si TFTs of metal source and drain using blue-laser-diode annealing (BLDA)

Journal of Information Display, 2017
Blue-laser-diode annealing (BLDA) in the continuous wave mode was performed for sputtered silicon (Si) films. Polycrystalline silicon (poly-Si) thin-film transistors (TFTs) were fabricated on a glass substrate.
Kouya Sugihara, Kiyoharu Shimoda, Tatsuya Okada, Takashi Noguchi   +3 more
doaj   +1 more source

A Hybrid Wide Drain Poly-Si FinTFT for RF Application

IEEE Access, 2018
In this paper, a hybrid wide drain polycrystalline silicon (poly-Si) fin-like thin-film transistor (FinTFT) for radio frequency (RF) applications is fabricated.
Hsin-Hui Hu, Han-Yang Cheng
doaj   +1 more source

Investigation of the Impact of the Wafer Resistivities on Double-Side Passivated Contact Silicon Solar Cells

SiliconPV Conference Proceedings
In this work, we investigate the impact of substrate resistivities on the performance of poly-Si based double-side passivated contact solar cells, featuring high-temperature fire-through contacts to both n-type and p-type poly-Si, where the contacts are
Pradeep Padhamnath, Gabby De Luna, Ruohan Zhong, John Derek Arcebal, Ajeet Rohatgi, Armin G. Aberle   +5 more
doaj   +1 more source

Investigation of Contact Resistivities on APCVD (p) Poly-Si for Fired Passivating Contacts

SiliconPV Conference Proceedings
We investigate the properties of boron doped polycrystalline Si (poly-Si) deposited by atmospheric pressure chemical vapor deposition (APCVD) applied to fired passivating contacts (FPC), where no high temperature annealing takes place apart from the ...
Tobias Okker, Raphael Glatthaar, Frank Huster, Giso Hahn, Beatriz Cela Greven, Sven Seren, Barbara Terheiden   +6 more
doaj   +1 more source

Probing defects in 3D NAND flash memory with temperature-dependent leakage current [PDF]

AIP Advances
This study investigated the defect profiles of highly stacked 3D NAND flash memory using trap-assisted leakage current analysis. By extracting the activation energy (Ea), we examined leakage mechanisms under hydrogen (H) and fluorine (F) gas annealing ...
Donghyun Kim, Sae-In Bang, Ki Seok Heo, Seoyeon Choi, Jungchun Kim, Seunghee Jin, Minjung Kim, Eunmee Kwon, Jae Woo Lee   +8 more
doaj   +1 more source

Fabrication of Large-Grain Thick Polycrystalline Silicon Thin Films via Aluminum-Induced Crystallization for Application in Solar Cells

International Journal of Photoenergy, 2013
The fabrication of large-grain 1.25 μm thick polycrystalline silicon (poly-Si) films via two-stage aluminum-induced crystallization (AIC) for application in thin-film solar cells is reported.
Hsiao-Yeh Chu, Min-Hang Weng, Chen Lin
doaj   +1 more source

On composition, structure and gettering in polycrystalline Si passivating contacts for solar cells by atom probe tomography

Materials Today Advances
Doped polycrystalline Si (poly-Si) contacts with a nanoscale SiOx interlayer have attracted significant interest due to their excellent surface passivation and impurity gettering properties for high-efficiency crystalline Si photovoltaics. However, there
Apurv Yadav, Keita Nomoto, Andrew J. Breen, Di Yan, AnYao Liu, Wenjie Yang, Daniel Macdonald, Simon P. Ringer   +7 more
doaj   +1 more source

Laser pulse shape dependence of poly-Si crystallization

AIP Advances, 2017
Poly-Si crystallization mechanism is examined by conducting numerical simulations, combining the thermal diffusion equation with a rigorous coupled wave analysis method.
Oleg N. Prudnikov, Sung Tae Shin, Byoung-Ho Cheong   +2 more
doaj   +1 more source

Thermal cycle impact on polycrystalline silicon: Direct observation of electrical properties degradation and interfacial nanocrystalline grain defects

Nano Research
Tracing interfacical nanocrystalline grain defects (NCGD) formation inducing electrical characteristic degradation in thermal remains a challenging issue for polycrystalline silicon (poly-Si) stable and reliable application in engineering.
Qiaoqiao Kang, Xin Tian, Pu Wang, Haoxian Yan, Jifang Tao, Yi Yang, Tian-Ling Ren   +6 more
doaj   +1 more source

Optimization of Poly-Si/SiOx Passivated Contacts for Crystalline Silicon Bottom Cells Applications

SiliconPV Conference Proceedings
In this study we investigate the coupled impacts of poly-Si thickness, dopant activation annealing temperature and hydrogenation on n-TOPCon and p-TOPCon passivated contacts.
Julci Ditsougou, Thibaut Desrues, Anne Kaminski, Sébastien Dubois   +3 more
doaj   +1 more source