Results 11 to 20 of about 78,217 (266)
Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM [PDF]
Micromachines, 2020 Recently, one-transistor dynamic random-access memory (1T-DRAM) cells having a polysilicon body (poly-Si 1T-DRAM) have attracted attention as candidates to replace conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM).
Hyeonjeong Kim +5 more
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Analysis of a Lateral Grain Boundary for Reducing Performance Variations in Poly-Si 1T-DRAM [PDF]
Micromachines, 2020 A capacitorless one-transistor dynamic random-access memory device that uses a poly-silicon body (poly-Si 1T-DRAM) has been suggested to overcome the scaling limit of conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM).
Songyi Yoo, Wookyung Sun, Hyungsoon Shin
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Hydrogenation of sputtered ZnO:Al layers for double side poly-Si/SiOx solar cells
EPJ Photovoltaics, 2022 This work presents the development and the application of innovative and sustainable transparent conductive oxide (TCO) materials for contacting polysilicon (poly-Si) on oxide (SiOx) stacks used as passivating contacts in solar cell devices.
Seron Charles +8 more
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Laser Activation for Highly Boron-Doped Passivated Contacts
Solar, 2023 Passivated, selective contacts in silicon solar cells consist of a double layer of highly doped polycrystalline silicon (poly Si) and thin interfacial silicon dioxide (SiO2). This design concept allows for the highest efficiencies.
Saman Sharbaf Kalaghichi +3 more
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IEEE Journal of the Electron Devices Society, 2023 This work reports an ingenious hybrid thin-film transistor (TFT) process platform that allows monolithic integration of poly-Si and oxide-semiconductor (OS) TFT-based circuits using three-mask processes.
Ping-Che Liu +3 more
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Micromachines, 2021 We investigated the crystallinities of poly silicon (poly Si) annealed via green laser annealing (GLA) with a 532-nm pulsed laser and blue laser annealing (BLA) with 450-nm continuous-wave lasers.
Jeongsang Pyo, Bohae Lee, Han-Youl Ryu
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IEEE Journal of the Electron Devices Society, 2020 In this work, polycrystalline-silicon thin-film transistors (poly-Si TFTs) with asymmetric low metal contamination Ni-induced lateral crystallization (LC-NILC) poly-Si channel and high-κ HfO2 gate insulator (GI) have been successfully fabricated ...
Po-Yi Kuo +3 more
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Passivation of Poly-Si Thin Film Employing Si Self-Implantation and Its Application to TFTs
IEEE Journal of the Electron Devices Society, 2018 Silicon self-implantation technique is applied to passivate the defects in the grain boundaries of the polycrystalline silicon (poly-Si) thin film. The implantation of Si with low dose is a precise technique of introducing Si interstitials in the poly-Si
Rongsheng Chen +5 more
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Potential of NiOx/Nickel Silicide/n+ Poly-Si Contact for Perovskite/TOPCon Tandem Solar Cells
Energies, 2022 In this work, nickel silicide was applied to tandem solar cells as an interlayer. By the process of thermal evaporation, a layer of NiOx, hole transport layer (HTL) was deposited on n+ poly-Si layer directly.
Jiryang Kim +12 more
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Poly Si TFT on Microsheet [PDF]
ECS Transactions, 2009 In this study, we used thin flexible glass of 75 um in average thickness as a substrate to fabricate poly-Si TFT's. Glass substrates are so thin that they can be bent to radius of curvature as small as 3 inch. Glass substrate, we used, is borosilicate glass, thus barrier layers, SiNx fooled by a SiO2 layer, were deposited on both sides of glass ...
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