Results 191 to 200 of about 568,935 (268)

In Situ Pseudo‐Halide Diffusion Enables Buried Interface Regulation and Crystallinity Enhancement in Perovskite Solar Cells

open access: yesAdvanced Science, EarlyView.
Thermally activated LiHCOO induces in situ pseudo‐halide diffusion, promoting buried interface strain release and perovskite crystallization. The monoclinic LiHCOO phase forms an open framework structure that enhances HCOO− diffusion and drives interfacial restructuring.
Chao Gao   +4 more
wiley   +1 more source

Pharmacological Inhibition of FKBP51 Mitigates Early Life Adversity‐Induced Social Deficits in Male Mice

open access: yesAdvanced Science, EarlyView.
Early life adversity triggers persistent social subordination and brain‐wide molecular dysregulation. Pharmacological inhibition of the stress‐mediator FKBP51 during the adversity period prevents these long‐term deficits and restores normative social hierarchy.
Joeri Bordes   +15 more
wiley   +1 more source

Impact of Electrolyte Formulation on the Phase Behavior and Interphase Formation of Sb/Graphite Electrodes for K‐Ion Batteries

open access: yesAdvanced Science, EarlyView.
Electrolyte formulation is shown to govern both interphase chemistry and bulk phase evolution in Sb/graphite anodes for potassium‐ion batteries. A diglyme‐based localized high‐concentration electrolyte promotes a thin inorganic‐rich interphase, suppresses deep graphite potassiation, limits electrode swelling, and stabilizes amorphous KxSb formation ...
Ezzoubair Bendadesse   +10 more
wiley   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

open access: yesAdvanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song   +10 more
wiley   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

open access: yesAdvanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez   +12 more
wiley   +1 more source

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