Results 231 to 240 of about 6,179,454 (334)

Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET. [PDF]

Nanomaterials (Basel)
Yu M, Shen Y, Ma H, Zhang Q.
europepmc   +1 more source

Bioinspired STHVO based MPPT control for grid connected photovoltaic water pumping systems. [PDF]

Sci Rep
Ballouti A, Chouiekh M, Ameziane H, Zakriti A, El Mourabit Y, Bacanin N, Nikolic B, Karmouni H, Abouhawwash M.   +8 more
europepmc   +1 more source

1200V 4H-SiC MOSFET with a High-K Source Gate for Improving Third-Quadrant and High Frequency Figure of Merit Performance. [PDF]

Micromachines (Basel)
Li M, Qiu Z, Li T, Kang Y, Lu S, Hu X.
europepmc   +1 more source

A coupled inductor based high gain Z source DC DC converter with low voltage stress on switches for solar PV applications. [PDF]

Sci Rep
Shafiei-Fasaghandis O, Alipour H, Mohammadian L, Abedinzadeh T, Pouladi J.   +4 more
europepmc   +1 more source

Transient analysis of silicon carbide power MOSFET

, 2012
Bejoy N. Pushpakaran
openalex   +1 more source

Characterization Methods for Evaluating Charge Carrier Trapping Mechanisms of SiC Power MOSFETs

Ivana Kovacevic-Badstuebner, Nagel, Michel, Erlebach, Axel, Brandl, Anja, Natzke, Philipp, Belanche, Manuel, Goncalves de Medeiros, Helton, Kumar, Piyush, Race, Salvatore, Grossner, Ulrike   +9 more
openalex   +1 more source

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Power MOSFET

Automotive Power Systems, 2019
D. Neacşu
openaire   +2 more sources

Bias Temperature Instability of Silicon Carbide Power MOSFET Under AC Gate Stresses

IEEE transactions on power electronics, 2022
With increasing applications of silicon carbide power MOSFETs, more attention is being paid to reliability issues, among which the long-term stability of the gate threshold voltage is of paramount importance.
Xiaohan Zhong, Huaping Jiang, Guanqun Qiu, Lei Tang, Hua Mao, Chao Xu, Xiaofeng Jiang, Jiayu Hu, Xiaowei Qi, L. Ran   +9 more
semanticscholar   +1 more source

Ion-Induced Mesoplasma Formation and Thermal Destruction in 4H-SiC Power MOSFET Devices

IEEE Transactions on Nuclear Science, 2021
Both experiments and simulations have shown that single-event burnout (SEB), a catastrophic event, occurs at less than half of the rated blocking voltage in commercial 4H-SiC power devices under a heavy-ion strike.
Joseph A. McPherson, C. Hitchcock, T. Paul Chow, W. Ji, A. Woodworth   +4 more
semanticscholar   +1 more source

Junction Temperature Online Extraction Method for Power MOSFET by Current Fall Time

IEEE Transactions on Electron Devices, 2022
Temperature-sensitive electrical parameter (TSEP) approaches are widely used in junction temperature ( ${T}_{j}$ ) prediction of insulated gate bipolar transistor (IGBT). Due to different physical characteristics, TSEPs in IGBT may not suitable for power
Weiwei Wei, Wei Zhu, Tao Liu, Guoqing Xu
semanticscholar   +1 more source