Results 241 to 250 of about 6,179,454 (334)

Monolithic Integration of Lateral HV Power MOSFET with LV CMOS for SiC Power IC Technology

International Symposium on Power Semiconductor Devices and IC's, 2021
This paper reports the design and process flow for monolithic integration of lateral high voltage (HV) power MOSFET with low voltage (LV) CMOS circuits for SiC Power IC technology.
S. Isukapati, Hua Zhang, Tianshi Liu, Emran K. Ashik, Bongmook Lee, Adam J. Morgan, Woongje Sung, A. Fayed, A. Agarwal   +8 more
semanticscholar   +1 more source

Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature

IEEE transactions on power electronics, 2023
Due to the outstanding material properties, silicon carbide (SiC) power device is the most promising alternative to silicon devices and can work at higher junction temperature.
Fengtao Yang, Laili Wang, Hang Kong, Mengyu Zhu, Xingshuo Liu, Xiaohui Lu, Mengjie Qin, Tongyu Zhang, Yongmei Gan, Lixin Jia   +9 more
semanticscholar   +1 more source

Power MOSFET technology

1979 International Electron Devices Meeting, 1979
The recent development of high performance power MOSFET's threatens the Bipolar transistor monopoly on power control. Analysis of the presently available devices reveals several areas of superior performance. Properly designed power MOSFET's exhibit ultra-high speed operation, freedom from second breakdown, excellent temperature stability and large ...
A. Lidow, T. Herman, H.W. Collins
openaire   +1 more source

Power Cycling Modeling and Lifetime Evaluation of SiC Power MOSFET Module Using a Modified Physical Lifetime Model

IEEE transactions on device and materials reliability
This study aims to explore the solder fatigue lifetime of a developed high-voltage (1.7 kV/100 A) SiC power MOSFET module for on-board chargers (OBCs) subjected to power cycling test (PCT) in accordance with AQG 324.
Hsien-Chie Cheng, J. Syu, He-Hong Wang, Yan-Cheng Liu, K. Kao, T. Chang   +5 more
semanticscholar   +1 more source

Power Mosfet And Power Diode Models

[Proceedings] 1990 IEEE Workshop on Computers in Power Electronics, 2005
Equations derived from simplified device physics are used to implement power device models for circuit simulators. Expressions for the MOSFET capacitances Cgd(v) and Cgs(v) are based on the deltadepletion model for the gate-drain interface. For the diode, the basic charge-control model used in SPICE is extended to include reverse recovery.
C.L. Ma, P.O. Lauritzen, null Jigang Ong
openaire   +1 more source

Silicon Carbide Power MOSFET Model: An Accurate Parameter Extraction Method Based on the Levenberg–Marquardt Algorithm

IEEE transactions on power electronics, 2018
This letter proposes an accurate parameter extraction method based on the Levenberg–Marquardt algorithm for a silicon carbide (SiC) power mosfet model. An improved compact model uses this method to study the static behavior of SiC power mosfets according
Wadia Jouha, A. Oualkadi, P. Dherbécourt, E. Joubert, M. Masmoudi   +4 more
semanticscholar   +1 more source

Short Circuit Capability and Short Circuit Induced $V_{\mathrm{TH}}$ Instability of a 1.2-kV SiC Power MOSFET

IEEE Journal of Emerging and Selected Topics in Power Electronics, 2019
The withstand capability and threshold voltage ( $V_{\mathrm {TH}}$ ) instability of 1.2-kV silicon carbide (SiC) MOSFETs under repetitive short circuit (SC) tests are investigated.
Jiahui Sun, Jin Wei, Zheyang Zheng, Yuru Wang, K. J. Chen   +4 more
semanticscholar   +1 more source

Self-Thermal Protecting Power MOSFETs

SAE Technical Paper Series, 1987
<div class="htmlview paragraph">A power MOSFET which cuts off current surges itself at critical high temperatures and never breaks or fails thermally has been developed. The thermal sensors consist of PN junction diodes built into the polysilicon layers on the oxides of conventional DMOSFETs.</div>
Y. Tsuzuki, M. Yamaoka, K. Kawamoto
openaire   +1 more source

Active Gate Driver for Improving Current Sharing Performance of Paralleled High-Power SiC MOSFET Modules

IEEE transactions on power electronics, 2021
Featuring higher switching speed and lower losses, the silicon carbide MOSFETs (SiC MOSFETs) are widely used in higher power density and higher efficiency power electronic applications as a new solution.
Yang Wen, Yuan Yang, Yong Gao
semanticscholar   +1 more source

Surface-Potential-Based Silicon Carbide Power MOSFET Model for Circuit Simulation

IEEE transactions on power electronics, 2018
Transistor models have been playing a key role in designing efficient power converters. As the operating frequency of the converters becomes higher, transistor models need to represent physical device behavior accurately.
Michihiro Shintani, Yohei Nakamura, Kazuki Oishi, Masayuki Hiromoto, T. Hikihara, Takashi Sato   +5 more
semanticscholar   +1 more source