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IEEE Transactions on Electron Devices, 2018
The novel SiC/Si heterojunction power MOSFET has been advanced to improve the tradeoff between the breakdown voltage (BV) and specific on-resistance ( ${R}_{ \mathrm{ON},\textsf {sp}}$ ). The innovative terminal technology of breakdown point transfer has
B. Duan +3 more
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The novel SiC/Si heterojunction power MOSFET has been advanced to improve the tradeoff between the breakdown voltage (BV) and specific on-resistance ( ${R}_{ \mathrm{ON},\textsf {sp}}$ ). The innovative terminal technology of breakdown point transfer has
B. Duan +3 more
semanticscholar +1 more source
International Symposium on Power Semiconductor Devices and IC's, 2021
In this study, we have realized a monolithic silicon carbide (SiC) power integrated circuit (IC) integrating a 1.2 kV-class trench gate vertical metal-oxide-semiconductor field-effect transistor (MOSFET) and a complementary metal-oxide-semiconductor ...
M. Okamoto +3 more
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In this study, we have realized a monolithic silicon carbide (SiC) power integrated circuit (IC) integrating a 1.2 kV-class trench gate vertical metal-oxide-semiconductor field-effect transistor (MOSFET) and a complementary metal-oxide-semiconductor ...
M. Okamoto +3 more
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A Radiation-Hardened Trench Power MOSFET for Aerospace Applications
Asia Pacific Conference on Circuits and Systems, 2018Power MOSFETs are important satellite components. In this paper, a radiation-hardened trench power MOSFET is designed. In order to meet the requirements of aerospace uses, anti-total-dose radiation effect performance is improved by changing the process ...
Feng Yang +5 more
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Power MOSFET Verilog modelling
2016 12th IEEE International Symposium on Electronics and Telecommunications (ISETC), 2016Power MOSFETs are electronic devices used for modern switches. The complexity of mixed-signal system-on-chip using power MOSFETs has increased. Advanced analog and digital interfaces, tough requirements for their safety and reliability impose new advanced methodologies for their simulations.
Lidia Dobrescu +2 more
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Annual Conference of the IEEE Industrial Electronics Society, 2018
A compact electro-thermal SiC Power MOSFET model implemented in LTSpice is presented in this paper. A 1200 V, 90A CREE SiC power MOSFET (C2M0025120D) has been used in this work to illustrate the parameter extraction and experimental model validation. The
Md Maksudul Hossain +4 more
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A compact electro-thermal SiC Power MOSFET model implemented in LTSpice is presented in this paper. A 1200 V, 90A CREE SiC power MOSFET (C2M0025120D) has been used in this work to illustrate the parameter extraction and experimental model validation. The
Md Maksudul Hossain +4 more
semanticscholar +1 more source
Electric and Hybrid Vehicle Technology International, 2018
High power levels and possibilities for integration make the latest generation of inverters suitable for vehicle electrification and industrial applications
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High power levels and possibilities for integration make the latest generation of inverters suitable for vehicle electrification and industrial applications
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Power MOSFET failure mechanisms
2004 10th International Workshop on Computational Electronics (IEEE Cat. No.04EX915), 2005Power MOSFET failure mechanisms are reviewed and discussed with emphasis on the parasitic bipolar transistor (BJT) turn on. The first two failure mechanisms reviewed result from high dV/sub DS//dt. The third failure mechanism results from the slow reverse recovery of the MOSFET body diode and the fourth is a single event breakdown due to inadequate ...
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Energy efficient power MOSFETs
2010 IEEE International Conference on Integrated Circuit Design and Technology, 2010An overview is given of the main technology trends and innovations in Power MOSFET transistors ranging from LV(
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Power MOSFET failure revisited
PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference, 2003The failure of power MOSFETs during avalanche breakdown is discussed. A theory is presented that relates the failure to the temperature rise of the chip during the avalanche breakdown and to a critical current for failure. It is shown that the energy that can be safely dissipated during avalanche breakdown decreases as the starting current increases or
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Thermal instability of low voltage power-MOSFETs
30th Annual IEEE Power Electronics Specialists Conference. Record. (Cat. No.99CH36321), 2000Anomalous failures which occurred inside the theoretical forward biased safe operating area of the latest generation low voltage power MOS devices are reported and analyzed. The paper outlines how some technology improvements, while increasing the current capability, can induce thermal instability phenomena at low drain currents.
A. CONSOLI +6 more
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