Results 261 to 270 of about 6,179,454 (334)

Power capability limits of power MOSFET devices

Microelectronics Reliability, 2002
Abstract With technology progression, power capability becomes a more critical concern in optimizing power device designs in various smart power IC applications. Interaction between the electrical and thermal entities is essential in understanding the power capability limit of the semiconductor devices in both transient and steady-state operations ...
Young S Chung, Bob Baird
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Power MOSFET Performance

2011
The first two chapters offered an introduction to power MOSFET fundamentals and described the expectation on MOSFET performance from the point of view of different applications. This chapter provides some basic hints how to make a good power MOSFET, especially one optimized for hard switching applications.
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The Power MOSFET

2007
This chapter presents an overview of power metal oxide semiconductor field effect transistor (MOSFET). One of the main contributions that led to the growth of the power electronics field has been the unprecedented advancement in the semiconductor technology, especially with respect to switching speed and power handling capabilities.
openaire   +3 more sources

A new high voltage power MOSFET for power conversion applications

Conference Record of the 2000 IEEE Industry Applications Conference. Thirty-Fifth IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy (Cat. No.00CH37129), 2002
The aim of this paper is to explore the switching capability of a new kind of high-voltage power MOSFET device called multiple drain mesh (MDmesh). This new power MOSFET shows very interesting characteristics in terms of both die size reduction and switching performances.
GALLUZZO A, MELITO M, MUSUMECI S, RACITI, Angelo, SAGGIO M.   +4 more
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Wideband driver for power MOSFETs†

International Journal of Electronics, 1984
Abstract A power MOSFET drive circuit which is not referenced to ground and which is suitable for wideband applications is reported. Biasing power and triggering signals are transformer-coupled separately to achieve electrical isolation between the driving circuitry and the controlled power stage.
C. F. CHRISTIANSEN, M. I. VALLA, N. H. MARTÍNEZ   +2 more
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Datasheet-Driven Compact Model of Silicon Carbide Power MOSFET Including Third-Quadrant Behavior

IEEE transactions on power electronics, 2021
A. Rashid, Md Maksudul Hossain, A. Emon, H. Mantooth   +3 more
semanticscholar   +1 more source

Nanosecond switching using power MOSFETs

Review of Scientific Instruments, 1990
It is shown that using the secondary breakdown effect of a bipolar transistor, often called an avalanche transistor, the large input capacitance of a power MOSFET may be charged very quickly. A power MOSFET driven by an avalanche transistor is used to generate electrical pulses of >800 V into 50 Ω with rise times of approximately 3 ns.
R. J. Baker, M. D. Pocha
openaire   +1 more source

Cryogenic MOSFET power conversion

Proceedings of the Workshop on Low Temperature Semiconductor Electronics, 2003
Possible applications of low-temperature electronics in the field of cryogenic power conversion are examined. Full-bridge amplifiers were built and tested at liquid-nitrogen temperature. Transistor conduction and switching losses are analyzed and compared for 300 K and 77 K. The effect of low-temperature operation on overall power conversion efficiency
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Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

IEEE transactions on power electronics, 2019
The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC) mosfets have the potential to replace Si insulated gate bipolar transistors (IGBTs) in medium-/low-voltage and high-power applications.
Lei Zhang, Xibo Yuan, Xiaojie Wu, Congcong Shi, Jiahang Zhang, Yonglei Zhang   +5 more
semanticscholar   +1 more source

SiC Power MOSFET modeling challenges

2012 Students Conference on Engineering and Systems, 2012
SiC Power MOSFETs show a huge potential for high voltage, high temperature, high-power and high-frequency power electronic applications. Recently SiC MOSFETs were being made available in market. It is important to have spice models to validate the circuit using such high performance devices because it is not always possible to put the real hardware in ...
Rajendra Pratap, R K Singh, Vineeta Agarwal   +2 more
openaire   +1 more source