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Asymmetric gate resistor power MOSFET
2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012Power converters, e.g. in a popular synchronous buck topology, need high performance power MOSFETs in order to achieve high efficiency, low voltage ringing, ESD protection and low EMI. To satisfy these requirements, an asymmetric gate resistor power MOSFET is proposed by integrating a shunt resistor with a parallel LDMOSFET-connected diode in a source ...
Jun Wang +3 more
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Reliability analysis of power MOSFET
2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices & Workshop on Piezoresponse Force Microscopy, 2014As an indispensible part of electronic equipment, the reliability of the whole system is affected by the degradation performance of power MOSFET tube. Based on geometry, material properties and boundary conditions, the repeated testing can be reduced, and the period of failure analysis can be shortened. This article is based on the finite element model
Peisheng Liu +3 more
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Turn-off failure of power MOSFETs
1985 IEEE Power Electronics Specialists Conference, 1985Experimental results of the failure of power MOSFET's during inductive turn-off are discussed. The electrical characteristics of these devices during failure are shown to be identical to those of a bipolar transistor undergoing second breakdown. Other comparisons of the power MOSFET failure and bipolar second breakdown are made.
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Online Condition Monitoring of Power MOSFET Gate Oxide Degradation Based on Miller Platform Voltage
IEEE transactions on power electronics, 2017X. Ye +4 more
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Thermal effects in power MOSFETs
CAS 2005 Proceedings. 2005 International Semiconductor Conference, 2005., 2005Over the year the state-of-the-art technologies pushed the VLSI chips to higher clock speed and packing density having a direct impact on the on-chip temperature rise. Without good thermal engineering, significantly non-uniform temperature distribution can lead to considerable on-chip temperature gradient.
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Improved SiC Power MOSFET Model Considering Nonlinear Junction Capacitances
IEEE transactions on power electronics, 2018Zhuolin Duan, T. Fan, X. Wen, Dong Zhang
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