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SiC power MOSFET gate oxide breakdown reliability — Current status
IEEE International Reliability Physics Symposium, 2018K. Cheung
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New generation 6.5 kV SiC power MOSFET
IEEE Workshop on Wide Bandgap Power Devices and Applications, 2017S. Sabri +7 more
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Switching power losses of power MOSFETs
Electrical Engineering in Japan, 1985Mineo Katsueda, Tetsuo Iijima
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Pseudocapacitance: From Fundamental Understanding to High Power Energy Storage Materials
Chemical Reviews, 2020Simon Fleischmann +2 more
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Role of parasitic capacitances in power MOSFET turn-on switching speed limits: A SiC case study
European Conference on Cognitive Ergonomics, 2017D. Cittanti +3 more
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A high frequency isolated resonant gate driver for SiC power MOSFET with asymmetrical ON/OFF voltage
Applied Power Electronics Conference, 2017Juzheng Yu +5 more
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