Results 91 to 100 of about 370,543 (306)

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band. [PDF]

Sensors (Basel), 2023
Tang H, Yang C, Qin L, Liang L, Lei Y, Jia P, Chen Y, Wang Y, Song Y, Qiu C, Zheng C, Li X, Li D, Wang L.   +13 more
europepmc   +1 more source

Controlling the harmonic conversion efficiency in semiconductor superlattices by interface roughness design

, 2019
In semiconductor superlattices, when Bragg oscillating electrons interact with an input electromagnetic field, frequency multiplication is possible. An ideal superlattice has a purely antisymmetric voltage current response and can thus produce only odd ...
Apostolakis, Apostolos, Pereira, Mauro F.   +1 more
core   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Chip-scale high-peak-power semiconductor/solid-state vertically integrated laser. [PDF]

Nat Commun, 2022
Yue J, Tanaka K, Hirano G, Yonezawa G, Shimizu M, Iwakoshi Y, Tobita H, Koda R, Higa Y, Watanabe H, Yanashima K, Kamata M.   +11 more
europepmc   +1 more source

Transistor step stress testing program, JANTX 2N2905A [PDF]

The effect of power and temperature stresses when applied to a variety of semiconductor devices is ...

core   +1 more source

A New Threshold Switching Device With Tunable Negative Differential Resistance Based on ErMnO3 Polymorphs

Advanced Functional Materials, EarlyView.
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu, Florian Maudet, Thanh Luan Phan, Wassim Hamouda, Richard Schroedter, Ahmet Samil Demirkol, Ronald Tetzlaff, Veeresh Deshpande, Catherine Dubourdieu   +8 more
wiley   +1 more source

Development of Ag-In Alloy Pastes by Mechanical Alloying for Die Attachment of High-Power Semiconductor Devices. [PDF]

Materials (Basel), 2022
Tsai CH, Huang WC, Kao CR.
europepmc   +1 more source

New developments in power semiconductors [PDF]

, 1983
This paper represents an overview of some recent power semiconductor developments and spotlights new technologies that may have significant impact for aircraft electric secondary power.
Sundberg, G. R.
core   +1 more source

Regiorandom Polythiophenes for Fully Stretchable Electrochemical Transistors and Logic Circuits

Advanced Functional Materials, EarlyView.
Regiorandom (RRa) polythiophenes, once regarded as unsuitable for electronics, exhibit exceptional switching performance via volumetric electrochemical doping. Optimized RRa‐based organic electrochemical transistors (OECTs) achieve a high on/off ratio (≈104), stable operation under 200% strain, and enable fully stretchable logic gates, demonstrating ...
Dong Hyun Park, Min Su Kim, Kyu Yeon Kim, Jae Hyun Han, Moon Sung Kang, Kyung Gook Cho, Keun Hyung Lee   +6 more
wiley   +1 more source

GaN half-bridges on electrical and thermal co-designed ceramic substrates

Power Electronic Devices and Components
This work presents an analysis of an electrically and thermally optimized GaN half-bridge module based on ceramic a substrate. An effective thermal and electrical co-design is a decisive factor in achieving high efficiency and power density.
Manuel Rueß, Peter Mack, Dominik Koch, Aline Reck, Mathias C.J. Weiser, André Zimmermann, Ingmar Kallfass   +6 more
doaj   +1 more source