Results 121 to 130 of about 370,543 (306)

Trifluoromethoxylated Electron Acceptor Enabling Ternary Organic Solar Cells with over 20% Power Conversion Efficiency

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT In this work, we introduce a trifluoromethoxy (OCF3) group as a pseudo‐halogen terminal group design for non‐fullerene acceptors, which combines strong inductive electron‐withdrawing ability with moderate resonance donation. The as‐synthesized BTP‐OCF3, when benchmarked against its methoxy analogue BTP‐OCH3, demonstrates narrowed bandgap ...
Chunliang Li   +16 more
wiley   +1 more source

Research on Power Semiconductor Converter Technology for Rail Transit Applications

open access: yes机车电传动, 2020
The core of the development of high-power converter technology lies in power semiconductor technology. The iterative optimization of traditional silicon-based power semiconductor devices and the gradually maturity of new wide-band gap material ...
Yu QI, Zechun DOU, Rongjun DING
doaj  

Transistor step stress program for JANTX2N2605 [PDF]

open access: yes
The effect was studied of power/temperature step stress when applied to the PNP transistor JANTX2N2605 manufactured by Raytheon and National Semiconductor.

core   +1 more source

Meniscus Pixel Printing for Contact‐Lens Vision Sensing and Robotic Control

open access: yesAdvanced Functional Materials, EarlyView.
A visual‐sensing contact lens is enabled by meniscus pixel printing (MPP), which rapidly patterns a 200 µm perovskite photodetector pixel in 1 s without masks, vacuum processing, or bulky equipment. A deep‐learning‐based super‐resolution reconstructs sparse on‐lens signals into 80 × 80 high‐resolution visual information, while AI‐driven eye‐tracking ...
Byung‐Hoon Gong   +7 more
wiley   +1 more source

Online Calibration Method for High-Precision On-State Voltage Measurement of Power Semiconductors

open access: yesIEEE Access
This paper presents an online high-precision calibration method for on-state voltage measurement of power semiconductors using active temperature control.
Karla Drazenovic   +3 more
doaj   +1 more source

Establishing a Model Precursor System: Over a Decade of Research on Carbon Dots from the Citric Acid‐Urea System

open access: yesAdvanced Functional Materials, EarlyView.
The citric acid/urea (CA‐Urea) precursor system offers a versatile, scalable route to carbon dots with tunable luminescence and multifunctionality. Mechanistic insights into precursor chemistry and reaction parameters have enabled doping, surface modification, and hybridization strategies, yielding CDs for luminescent devices, sensing, catalysis ...
Yupeng Liu   +10 more
wiley   +1 more source

Statistically Resolving Thickness‐Dependent Electrical Characteristics in Multilayer‐MoS2 Transistors

open access: yesAdvanced Functional Materials, EarlyView.
A large number of MoS2 flakes were screened to obtain high‐quality flakes based on optical intensities in R, G, and B channel images. The flakes were classified from Level 1 to 6 based on optical intensities in the R, G, and B channel images. Low‐quality flake exhibited wrinkled, folded, or overlapped features, while high‐quality displayed a neat ...
Sanghyun Lee   +11 more
wiley   +1 more source

The Role of Ultra‐Thin Buffer Layers for Achieving Ultra‐Low Dark Currents in Single‐Component Organic Photodetectors

open access: yesAdvanced Functional Materials, EarlyView.
Here, SubNc single‐component organic photodiodes (SC‐OPDs) are investigated, which achieve highly competitive performance metrics, including high EQE, ultra‐low JD, and high specific detectivity (D*). This study emphasizes the critical role of an organic buffer layer in studying the interface energetics and effects to achieve state‐of‐the‐art ...
Anncharlott Kusber   +12 more
wiley   +1 more source

Submicron gate InP power MISFET's with improved output power density at 18 and 20 GHz [PDF]

open access: yes
The microwave characteristics are presented at 18 and 20 GHz of submicron gate indium phosphide (InP) metal-insulator-semiconductor field-effect transistors (MISFET's) for high output power density applications. InP power MISFET's were fabricated and the
Biedenbender, M. D.   +6 more
core   +1 more source

Multi‐Scale Interface Engineering of MXenes for Multifunctional Sensory Systems

open access: yesAdvanced Functional Materials, EarlyView.
MXenes, as two‐dimensional transition metal carbides and nitrides, demonstrate remarkable capabilities for multifunctional sensing applications. This review systematically examines multi‐scale interface engineering approaches that enhance sensing performance, enable diverse detection functionalities, and improve system‐level compatibility in MXene ...
Jiaying Liao, Sin‐Yi Pang, Jianhua Hao
wiley   +1 more source

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