Results 151 to 160 of about 370,543 (306)
A 2D heterointerface with a two‐site anchor bridge suppresses nonradiative recombination at the perovskite/C₆₀ interface by reducing surface defects, elevating the Fermi level, and strengthening the electric field. This strategy enables efficient electron extraction, delivering 26.32% efficiency, 1.217 V Voc, excellent operational stability, and broad ...
Chaohui Li +27 more
wiley +1 more source
High‐Throughput Exfoliation of Optoelectronic‐Grade MoS2 via Turbulent‐Flow Wet Jet Milling
A scalable wet jet milling exfoliation method is demonstrated for producing optoelectronic‐grade MoS2 nanosheets using environmentally friendly ethyl cellulose in ethanol dispersion media. Guided by fluid dynamics modeling, this approach is optimized to achieve record‐high exfoliation throughput and concentration.
Maryam Khalaj +7 more
wiley +1 more source
Advanced WBG power semiconductor packaging: nanomaterials and nanotechnologies for high-performance die attach paste. [PDF]
Ju YM +5 more
europepmc +1 more source
InSb, a narrow‐bandgap semiconductor with high carrier mobility, is promising for thermoelectric energy conversion but suffers from high lattice thermal conductivity and strong bipolar conduction. Here, in situ interface engineering using Co2O3 nanoprecursors forms hierarchical CoSbx/In2O3/CoSb3 heterostructures that enhance phonon scattering and ...
Jiwu Xin +10 more
wiley +1 more source
A Review of Diamond Materials and Applications in Power Semiconductor Devices. [PDF]
Zhao F, He Y, Huang B, Zhang T, Zhu H.
europepmc +1 more source
Flexible piezoresistive pressure sensors underpin wearable and soft electronics. This review links sensing physics, including contact resistance modulation, quantum tunneling and percolation, to unified materials/structure design. We highlight composite and graded architectures, interfacial/porous engineering, and microstructured 3D conductive networks
Feng Luo +2 more
wiley +1 more source
Highly Robust, Pressureless Silver Sinter-Bonding Technology Using PMMA Combustion for Power Semiconductor Applications. [PDF]
Gu M, Nam H, Park S, Shin M, Choa SH.
europepmc +1 more source
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim +6 more
wiley +1 more source
Formation of Quasi‐Decoupling Interface on Li‐Metal Anodes in High Donor Electrolyte
Li‐metal anode (LMA) is stabilized by introducing Li2Te2 as an electrolyte additive for Li‐metal batteries. Upon contact with Li, Li2Te2 spontaneously converts to Li2Te, which electronically isolates Li from dimethyl sulfoxide due to its large bandgap and minimal Bader charge transfer.
Hyerim Kim +9 more
wiley +1 more source
Self‐Healing and Stretchable Synaptic Transistor
A self‐healing stretchable synaptic transistor (3S‐T) is realized using a p‐PVDF‐HFP‐DBP/PDMS‐MPU‐IU bilayer as gate insulator, where dipole‐dipole interaction enhances polarization to achieve a large memory window. Leveraging its neuronal biomimicry, the synaptic transistor demonstrates electrically compatibility with the biological brain. Furthermore,
Hyongsuk Choo +10 more
wiley +1 more source

