Watt-Level, Narrow-Linewidth, Tunable Green Semiconductor Laser with External-Cavity Synchronous-Locking Technique. [PDF]
Sensors (Basel)Feng C, Zeng B, Zou J, Ruan Q, Luo Z.
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Electroactive Liquid Crystal Elastomers as Soft Actuators
Advanced Functional Materials, EarlyView.Electroactive liquid crystal elastomers (eLCEs) can be actuated via electromechanical, electrochemical, or electrothermal effects. a) Electromechanical effects include Maxwell stress, electrostriction, and the electroclinic effect. b) Electrochemical effects arise from electrode redox reactions.
Yakui Deng, Min‐Hui Li
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Influence of metal-semiconductor interface treatments and absorber structure on the performance and reliability of uni-traveling-carrier photodiodes (UTC-PDs). [PDF]
Sci RepKang SC, Cho JC, Lee ES, Park DW.
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Three‐dimensional Antimony Sulfide Based Flat Optics
Advanced Functional Materials, EarlyView.This work presents the development of a grayscale electron beam lithography (g‐EBL) method for fabricating antimony trisulfide (Sb2S3) nanostructures with customizable 3D profiles. The refractive index of g‐EBL patterned Sb2S3 is determined based on the synergy of genetic algorithm and transfer matrix method.
Wei Wang +18 more
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A Dynamic Physics-Guided Ensemble Model for Non-Intrusive Bond Wire Health Monitoring in IGBTs. [PDF]
Micromachines (Basel)Yang X, Hu Z, Bo Y, Shi T, Cui M.
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<title>Techniques for increasing output power from mode-locked semiconductor lasers</title>
, 1996 A. Már, G.A. Vawter
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Advanced Functional Materials, EarlyView.A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
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Comparison of Quantum Transition Characteristics of Group II-VI (ZnO), Group III-V (GaN) Compound Semiconductors, and Intrinsic (Si) Semiconductors in Response to Externally Applied Energy. [PDF]
Materials (Basel)Park H, Lee SH.
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