Results 271 to 280 of about 372,503 (352)
Research on Radiation-Hardened RCC Isolated Power Supply for High-Radiation-Field Applications. [PDF]
Lu X +7 more
europepmc +1 more source
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak +14 more
wiley +1 more source
Pushing the Detailed Balance Limit in III-V Semiconductor Photoconversion with Bandgap-Engineering Multijunction Architectures. [PDF]
Gao X +6 more
europepmc +1 more source
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter +4 more
wiley +1 more source
Reconfigurable Magneto-Optoelectronic Devices for Multidimensional Optical Neural Network. [PDF]
He H +9 more
europepmc +1 more source
PTFE nanoparticle–anchored rGO (rGO@PTFE) for scalable solvent‐free fabrication of ultra‐thick, high‐density cathodes, achieving high conductivity (9.55 S cm−1), lithium transference (0.73), and improved wettability, is developed. The resulting cathode delivers 15.2 mAh cm−2 areal and 563 mAh cm−3 volumetric capacities, with full cells exhibiting 637 ...
Juhee Yoon +7 more
wiley +1 more source
Doppler Lidar Based on Mode-Locked Semiconductor Lasers. [PDF]
Chen Y +6 more
europepmc +1 more source
Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite +5 more
wiley +1 more source
High-κ dielectric van der Waals integration on 2D semiconductors for three-dimensional complementary logic systems. [PDF]
Kang T +6 more
europepmc +1 more source
Rational halogen mixing strategy was employed to shift the bandgap of Cs2PbBr2I2 from ultraviolet to visible region, enabling first realization of a visible‐light photodetector with this 2D layered Ruddlesden‐Popper perovskite material. Under illumination, light‐induced internal field forms and drives trap‐mediated persistent photoconductivity ...
Md Fahim Al Fattah +11 more
wiley +1 more source

