Results 121 to 130 of about 221,949 (346)

Exploring the Way to Approach the Efficiency Limit of Perovskite Solar Cells by Drift-Diffusion Model

, 2017
Drift-diffusion model is an indispensable modeling tool to understand the carrier dynamics (transport, recombination, and collection) and simulate practical-efficiency of solar cells (SCs) through taking into account various carrier recombination losses ...
Choy, Wallace C. H., Ren, Xingang, Sha, Wei E. I., Wang, Zishuai   +3 more
core   +2 more sources

An Ultra‐Robust Memristor Based on Vertically Aligned Nanocomposite with Highly Defective Vertical Channels for Neuromorphic Computing

Advanced Functional Materials, EarlyView.
An ultra‐robust memristor based on SrTiO3‐CeO2 (S‐C) vertically aligned nanocomposite (VAN) achieving exceptional endurance of 1012 switching cycles via interface engineering. Artificial neural networks (ANNs) integrated with S‐C VAN memristors exhibit high training accuracy across multiple datasets.
Zedong Hu, Hongyi Dou, Jeremy B. Gan, Cun Li, Xuanyu Sheng, Juanjuan Lu, Abhijeet Choudhury, Jialong Huang, Yizhi Zhang, Zhongxia Shang, Ye Cao, Xinghang Zhang, Haiyan Wang   +12 more
wiley   +1 more source

Threshold voltage instability of SiC MOSFETs under very‐high temperature and wide gate bias

IET Power Electronics
Threshold voltage (VTH) instability affects the reliability of silicon carbide (SiC) MOSFETs. In this article, the influence of gate bias (VGS) and high temperature on VTH instability is investigated under wide VGS and very‐high temperature range (150°C ...
Cong Chen, Yumeng Cai, Peng Sun, Zhibin Zhao   +3 more
doaj   +1 more source

Maximum Effectiveness of Electrostatic Energy Harvesters When Coupled to Interface Circuits

, 2012
Accepted ...
Green, TC, Mitcheson, PD
core   +1 more source

Direct Evidence of Topological Dirac Fermions in a Low Carrier Density Correlated 5d Oxide

Advanced Functional Materials, EarlyView.
The 5d oxide BiRe2O6 is discovered as a low‐carrier‐density topological semimetal hosting symmetry‐protected Dirac fermions stabilized by nonsymmorphic symmetries. Angle‐resolved photoemission spectroscopy, quantum oscillations, and magnetotransport measurements reveal gapless Dirac cones, quasi‐2D Fermi surfaces, high carrier mobility, and a field ...
Premakumar Yanda, Jorge Cardenas‐Gamboa, Ding Pei, François Bertran, Leila Noohinejad, Snehashish Chatterjee, Changjiang Yi, Iñigo Robredo, Horst Borrmann, Maia G. Vergniory, Chandra Shekhar, Claudia Felser   +11 more
wiley   +1 more source

Dynamic Control of Synaptic Plasticity by Competing Ferroelectric and Trap‐Assisted Switching in IGZO Transistors with Al2O3/HfO2 Dielectrics

Advanced Functional Materials, EarlyView.
A frequency‐tunable ferroelectric synaptic transistor based on a buried‐gate InGaZnO channel and Al2O3/HfO2 dielectric stack exhibits linear and reversible weight updates using single‐polarity pulses. By switching between ferroelectric and trap‐assisted modes depending on input frequency, the device simplifies neuromorphic circuit design and achieves ...
Ojun Kwon, Dong Ho Lee, Seyoung Oh, Jongwon Yoon, Hyo‐Bae Kim, Ji‐Hoon Ahn, Woojin Park, Han Seul Kim, Byungjin Cho   +8 more
wiley   +1 more source

Vibration Alert Bracelet for Notification of the Visually and Hearing Impaired [PDF]

, 2019
This paper presents the prototype of an electronic vibration bracelet designed to help the visually and hearing impaired to receive and send emergency alerts. The bracelet has two basic functions.
Ababei, Cristinel, Conley, Kelsey, D\u27Souza, Jon, Foyer, Alex, Hara, Patrick, Janik, Tom, Reichard, Jason, Tamma, Chandana   +7 more
core   +1 more source

Synthesis and Electronic Structure of the Fractionally Occupied Double Perovskite EuTa2O6 with Ordered Europium Vacancies

Advanced Functional Materials, EarlyView.
Two‐dimensional electronic states are the foundation of modern semiconductor technology. Here, we report molecular‐beam epitaxy growth of fractional double perovskite, EuTa2O6. Reciprocal space mapping and transmission electron microscopy confirm a layered ordering of A‐site cations.
Tobias Schwaigert, Ali Barooni, Benjamin Gregory, Paul Malinowski, Anirudh Tenneti, Sonia Hasko, Brenan Palazzolo, Jeffrey W Hodgson, Brendan Faeth, Patrick M. Woodward, Kyle M. Shen, Andrej Singer, Maryam Ghazisaeidi, Salva Salmani‐Rezaie, Darrell G. Schlom, Kaveh Ahadi   +15 more
wiley   +1 more source

Session 2A: Power semiconductor devices [PDF]

, 1987

openalex   +1 more source

Diamond on GaN integration for power semiconductor devices with efficient thermal management

, 2021
R. Ardebili
openalex   +2 more sources