Results 131 to 140 of about 221,949 (346)

Emerging 2D Materials and Their Hybrid Nanostructures for Label‐Free Optical Biosensing: Recent Progress and Outlook

open access: yesAdvanced Functional Materials, EarlyView.
This review highlights recent advances in label‐free optical biosensors based on 2D materials and rationally designed mixed‐dimensional nanohybrids, emphasizing their synergistic effects and novel functionalities. It also discusses multifunctional sensing platforms and the integration of machine learning for intelligent data analysis.
Xinyi Li, Yonghao Fu, Yuehe Lin, Dan Du
wiley   +1 more source

Application of a IGCT for Pulsed Power

open access: yesKongzhi Yu Xinxi Jishu, 2012
It introduced a power semiconductor (IGCT) applied in pulsed power, including the device and the structure. IGCT is suitable for pulsed power applications owing to high current and high di/dt capability.
YAN Ji   +6 more
doaj  

Functional Materials for Environmental Energy Harvesting in Smart Agriculture via Triboelectric Nanogenerators

open access: yesAdvanced Functional Materials, EarlyView.
This review explores functional and responsive materials for triboelectric nanogenerators (TENGs) in sustainable smart agriculture. It examines how particulate contamination and dirt affect charge transfer and efficiency. Environmental challenges and strategies to enhance durability and responsiveness are outlined, including active functional layers ...
Rafael R. A. Silva   +9 more
wiley   +1 more source

MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance

open access: yesAdvanced Functional Materials, EarlyView.
Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley   +1 more source

A Comprehensive Review on Next-Generation Modeling and Optimization for Semiconductor Devices

open access: yesIEEE Access
The integration of physics-based modelling and artificial intelligence (AI) is transforming semiconductor device simulation, facilitating unparalleled precision, efficiency, and predictive power.
Pratikhya Raut   +2 more
doaj   +1 more source

Defects Dynamic in Photo‐Excited CeO2 and their Influence on CO2 Photoreduction

open access: yesAdvanced Functional Materials, EarlyView.
X‐ray photoelectron spectroscopy study under light excitation is presented to track the defect dynamic (Ce4+ to Ce3+) in CeO2. Surface enhanced Raman spectroscopy confirmed the key role of Ce3+ states in controlling charge and energy transfer across the CeO2‐dye molecule interface.
Rambabu Yalavarthi   +3 more
wiley   +1 more source

2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates

open access: yesApplied Physics Express
High voltage (∼2 kV) Al _0.64 Ga _0.36 N-channel high electron mobility transistors were fabricated with an on-resistance of ∼75 Ω. mm (∼21 mΩ. cm ^2 ). Two field plates of variable dimensions were utilized to optimize the breakdown voltage.
Md Tahmidul Alam   +7 more
doaj   +1 more source

Multicolor Optoelectronic Synapse Enabled by Photon‐Modulated Remote Doping in Solution‐Processed Van Der Waals Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
Multicolor optoelectronic synapses are realized by vertically integrating solution‐processed MoS2 thin‐film and SWCNT. The electronically disconnected but interactive MoS2 enables photon‐modulated remote doping, producing a bi‐directional photoresponse.
Jihyun Kim   +8 more
wiley   +1 more source

Interface Thermal Resistance in Heterostructures of Micro–Nano Power Devices: Current Status and Future Challenges

open access: yesNanomaterials
As micro–nano power devices have evolved towards high frequency, high voltage, and a high level of integration, the issue of thermal resistance at heterointerfaces has become increasingly prominent, posing a key bottleneck that limits device performance ...
Yinjie Shen   +5 more
doaj   +1 more source

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