Results 141 to 150 of about 221,949 (346)

Device Integration Technology for Practical Flexible Electronics Systems

Advanced Functional Materials, EarlyView.
Flexible device integration technologies are essential for realizing practical flexible electronic systems. In this review paper, wiring and bonding techniques critical for the industrial‐scale manufacturing of wearable devices are emphasized based on flexible electronics.
Masahito Takakuwa, Kento Yamagishi, Sunghoon Lee, Yusaku Tagawa, Takao Someya, Tomoyuki Yokota   +5 more
wiley   +1 more source

Complex Cryptographic and User‐Centric Physically Unclonable Functions Enabled by Strain‐Sensitive Nanocrystals via Selective Ligand Exchange

Advanced Functional Materials, EarlyView.
This study investigates electromechanical PUFs that improve on traditional electric PUFs. The electron transport materials are coated randomly through selective ligand exchange. It produces multiple keys and a key with motion dependent on percolation and strain, and approaches almost ideal inter‐ and intra‐hamming distances.
Seungshin Lim, Hanseok Seo, Taesung Park, Byung Ku Jung, Junhyeok Park, Young Kyun Choi, Dae Yang Oh, Soong Ju Oh   +7 more
wiley   +1 more source

Multiscale simulation and machine learning facilitated design of two-dimensional nanomaterials-based tunnel field-effect transistors: A review

APL Machine Learning
Traditional transistors based on complementary metal–oxide–semiconductor and metal–oxide–semiconductor field-effect transistors are facing significant limitations as device scaling reaches the limits of Moore’s law.
Chloe Isabella Tsang, Haihui Pu, Junhong Chen   +2 more
doaj   +1 more source

Session 5 Power Semiconductor Devices [PDF]

, 1982

openalex   +1 more source

Using In Situ TEM to Understand the Surfaces of Electrocatalysts at Reaction Conditions: Single‐Atoms to Nanoparticles

Advanced Functional Materials, EarlyView.
This review summarizes recent advances in closed‐cell in situ TEM strategies for accurate determination of the activity and stability of single‐atom catalyst systems during operation. Operando conditions causing dynamic changes of SAC systems are highlighted and we explain why ensemble average‐based optical techniques may benefit from the technological
Martin Ek, Soshan Cheong, Julie Cairney, Richard D. Tilley, Ingemar Persson   +4 more
wiley   +1 more source

Thermal Phase‐Modulation of Thickness‐Dependent CVD‐Grown 2D In2Se3

Advanced Functional Materials, EarlyView.
A comprehensive study of CVD‐grown 2D In2Se3 reveals a distinct thickness‐dependent phase landscape and a reversible, thermally driven transformation between β″ and β* variants. In situ TEM electron diffraction and Raman spectroscopy reveal structural dynamics, while the structural invariance of the α‐phase in ultrathin regimes highlights its stability—
Dasun P. W. Guruge, Zhenhuan Chen, Joseph F. S. Fernando, Chao Zhang, Liangzhi Kou, Konstantin L. Firestein, Dmitri V. Golberg   +6 more
wiley   +1 more source

Phase Change Material‐Driven Tunable Metasurface for Adaptive Terahertz Sensing and Communication in 6G Perceptive Networks

Advanced Functional Materials, EarlyView.
This study explores the benefits of metasurfaces made from functional materials, highlighting their ability to be adapted and improved for various high‐frequency applications, including communications and sensing. It first demonstrates the potential of these functional material‐based metasurfaces to advance the field of sub‐THz perceptive networks ...
Yat‐Sing To, Jiachen Du, Cyril Decroze, Laure Huitema, Aurelian Crunteanu, Hang Wong   +5 more
wiley   +1 more source

p-Type AlN epilayer growth for power semiconductor device by mixed-source HVPE method [PDF]

, 2019
Gang Seok Lee, Kyoung-Hwa Kim, 김상우, Injun Jeon, Hyung Soo Ahn, Min Yang, Sam Nyung Yi, Chae‐Ryong Cho, Kim Suck Whan   +8 more
openalex   +1 more source

Ice Lithography: Recent Progress Opens a New Frontier of Opportunities

Advanced Functional Materials, EarlyView.
This review focuses on recent advancements in ice lithography, including breakthroughs in compatible precursors and substrates, processes and applications, hardware, and digital methods. Moreover, it offers a roadmap to uncover innovation opportunities for ice lithography in fields such as biological, nanoengineering and microsystems, biophysics and ...
Bingdong Chang, Gwendoline A. E. Anand, Rubaiyet Haque, Dylan A. Chiaro, Mona Sharma, Andrew R. Williams, Frank Niklaus, Daryl W. Yee, Gavin M. King, Anpan Han   +9 more
wiley   +1 more source

An improved SiC SWITCH‐MOS with superior forward performance

IET Power Electronics
An improved 4H‐SiC SBD‐wall‐integrated trench metal‐oxide‐semiconductor (SWITCH‐MOS) with n‐bury and split‐gate is proposed. Under the premise of ensuring breakdown voltage (BV), the n‐bury layer can smooth the path to current conduction, which reduces ...
Junji Cheng, Tao Zhong, Huan Li, Ping Li, Bo Yi, Haimeng Huang, Siliang Wang, Qiang Hu, Hongqiang Yang   +8 more
doaj   +1 more source