Results 161 to 170 of about 221,949 (346)

Characterisation and Modeling of Gallium Nitride Power Semiconductor Devices Dynamic On-State Resistance

, 2017
Ke Li, Paul Evans, C. Mark Johnson
openalex   +1 more source

A Simplified On-State Voltage Measurement Circuit for Power Semiconductor Devices

, 2021
Yingzhou Peng, Huai Wang
openalex   +2 more sources

Strain‐Activated Photo‐Dehalogenation Unlocks Low‐Energy One and Two‐Photon 3D Microfabrication

Advanced Functional Materials, EarlyView.
5,14‐NMI‐Cz acts, conversely to its 7,10‐NMI‐Cz(7,10‐'dibromo‐2‐(2,6‐diisopropylphenyl)‐1H‐benzo[lmn]carbazolo[9,1‐bc][2,8]phenanthroline‐1,3(2H)‐dione) counterpart, as modular photoinitiator with panchromatic photoactivity, featuring a weak C–Br bond from geometric strain for efficient Type I & II initiation. These studies demonstrate applicability of
Kacper Piskorz, Katarzyna Starzak, Malgorzata Noworyta, Konrad Cyprych, Krzysztof Bartkowski, Zahra Badri, Sukhvinder Dhiman, Cina Foroutan‐Nejad, Jaroslaw Mysliwiec, Marcin Lindner, Joanna Ortyl   +10 more
wiley   +1 more source

Reconfigurable Metamirrors Based on Compliant Mechanisms

Advanced Functional Materials, EarlyView.
Providing the basis for numerous practical applications, the reconfigurability of metadevices is of great importance. Through the integration of controlled mechanical deformation with chiral meta‐atoms, a compliant mechanism based metamirror is demonstrated for active control over the polarization of electromagnetic waves.
Galestan Mackertich‐Sengerdy, Lei Kang, Sawyer D. Campbell, Douglas H. Werner   +3 more
wiley   +1 more source

CMOS-Compatible Micro Photovoltaic Generator with Post-Processing Enhanced Optical Absorption. [PDF]

Micromachines (Basel)
Chen HW, Lee CY, Dai CL.
europepmc   +1 more source

Germanium-doped silicon (sige) as a material for the manufacture of power semiconductor devices resistant to secondary cosmic radiation

, 2019
Сергей Витальевич Быткин, Татьяна Владимировна Критская   +1 more
openalex   +2 more sources

Complementary Logic Driven by Dielectrophoretic Assembly of 2D Semiconductors

Advanced Functional Materials, EarlyView.
Scalable, parallel fabrication of complementary logic gates is demonstrated using electric‐field‐driven deterministic assembly of electrochemically exfoliated 2D n‐type MoS2 and p‐type WSe2 nanosheets. This strategy yields MoS2 and WSe2 transistors featuring average mobilities of 4.3 and 3.0 cm2 V−1 s−1, respectively, and on/off ratios of > 104 ...
Dongjoon Rhee, Okin Song, Ji Yun Park, Yonghyun Albert Kwon, Jae Hyung Kim, In Soo Kim, Zdeněk Sofer, Jeong Ho Cho, Deep Jariwala, Hyesung Park, Joohoon Kang   +10 more
wiley   +1 more source

Flexible monolithic 3D complementary circuits based on 2D semiconductor inks. [PDF]

Nat Commun
Zou T, Heo S, Reo Y, Ryu GS, Lee J, Kim M, Kim S, Byeon G, Park JS, Xu W, Noh YY.   +10 more
europepmc   +1 more source

Power Semiconductor Devices and Smart Power IC Technologies CFP

, 2016

openalex   +1 more source

Exploiting Two‐Photon Lithography, Deposition, and Processing to Realize Complex 3D Magnetic Nanostructures

Advanced Functional Materials, EarlyView.
Two‐photon lithography (TPL) enables 3D magnetic nanostructures with unmatched freedom in geometry and material choice. Advances in voxel control, deposition, and functionalization open pathways to artificial spin ices, racetracks, microrobots, and a number of additional technological applications.
Joseph Askey, Arjen van den Berg, Sandra Ruiz Gomez, Claire Donnelly, Dirk Grundler, Sam Ladak   +5 more
wiley   +1 more source