First Demonstration of Hysteresis-Free IGZO/SnO-Based Complementary Circuits and SRAM with Long-Term Reliability Using SU-8 Passivation. [PDF]
Han C +7 more
europepmc +1 more source
Three‐dimensional Antimony Sulfide Based Flat Optics
This work presents the development of a grayscale electron beam lithography (g‐EBL) method for fabricating antimony trisulfide (Sb2S3) nanostructures with customizable 3D profiles. The refractive index of g‐EBL patterned Sb2S3 is determined based on the synergy of genetic algorithm and transfer matrix method.
Wei Wang +18 more
wiley +1 more source
Lateral Semiconductor-Free-Space Gate Transistors. [PDF]
Maciel García GI +5 more
europepmc +1 more source
High‐κ Dielectric (HfO2)/2D Semiconductor (HfSe2) Gate Stack for Low‐Power Steep‐Switching Computing Devices [PDF]
Taeho Kang +15 more
openalex +1 more source
Meta-parameterisation of power semiconductor devices for studies of efficiency and power density in high power converters [PDF]
René Barrera-Cárdenas +2 more
openalex +1 more source
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley +1 more source
Low resistance p-type contacts to monolayer WSe<sub>2</sub> through chlorinated solvent doping. [PDF]
Hoang L +10 more
europepmc +1 more source
A van der Waals optoelectronic synaptic device based on a ReS2/WSe2 heterostructure and oxygen‐treated h‐BN is presented, which enables both positive and negative PSCs through photocarrier polarity reversal. Bidirectional plasticity arises from gate‐tunable band bending and charge trapping‐induced quasi‐doping.
Hyejin Yoon +9 more
wiley +1 more source
Influence of Electrical Transients and A/D Converter Dynamics on Thermal Resistance Measurements of Power MOSFETs. [PDF]
Górecki K, Posobkiewicz K.
europepmc +1 more source
Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha +18 more
wiley +1 more source

