Results 221 to 230 of about 221,949 (346)

Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and Challenges. [PDF]

Nanomicro Lett
Lee CH, Ryu SH, Hwang T, Kim SH, Kim YS, Park JS.   +5 more
europepmc   +1 more source

P-type LiyNi1-x-yMgxO: A promising ultrawide bandgap semiconductor for Ga2O3 power devices applications

Madani Labed, Ho Jung Jeon, Jang Hyeok Park, Kwangsik Jeong, You Seung Rim   +4 more
openalex   +1 more source

Integrative Approaches for DNA Sequence‐Controlled Functional Materials

Advanced Functional Materials, EarlyView.
DNA is emerging as a programmable building block for functional materials with applications in biomimicry, biochemical, and mechanical information processing. The integration of simulations, experiments, and machine learning is explored as a means to bridge DNA sequences with macroscopic material properties, highlighting current advances and providing ...
Aaron Gadzekpo, Ewa Anna Oprzeska‐Zingrebe, Mariana Kozlowska, Lennart Hilbert, Iliya D. Stoev   +4 more
wiley   +1 more source

Flexible n-Channel Organic Transistors with Low Contact Resistance. [PDF]

ACS Appl Mater Interfaces
Steffens S, Wollandt T, Cordero-Solano K, Eichelmann R, Kochan A, Sun X, Letzkus F, Burghartz JN, Ludwigs S, Gade LH, Klauk H.   +10 more
europepmc   +1 more source

SiC power semiconductor devices for new applications in power electronics

, 2008
Dominique Planson, Dominique Tournier, Pascal Bevilacqua, Nicolas Dheilly, Hervé Morel, Christophe Raynaud, Mihai Lazar, Dominique Bergogne, Bruno Allard, Jean-Pierre Chante   +9 more
openalex   +2 more sources

Trap‐Modified Inverted Organic Photodetectors via Layer‐by‐Layer Processing with Poly(N‐vinylcarbazole) Additives

Advanced Functional Materials, EarlyView.
Trap state engineering in inverted organic photodetectors (OPDs) is achieved via combined layer‐by‐layer (LbL) processing and poly(N‐vinylcarbazole) (PVK) incorporation. LbL reduces the trap density while PVK additives gradually shift trap states from shallow band‐edge to deep mid‐gap levels, tailoring the energy distribution.
Jingwei Yi, Yi Yang, Yusen Pei, Apurva Gadikar, Vahid Mahdikhah, Myratgeldi Kotyrov, Seung Hyun Kim, Kenan Gundogdu, Wei You, Harald Ade, Franky So   +10 more
wiley   +1 more source

High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxy. [PDF]

Nat Commun
Zhou H, Zhang C, Zhang K, Huang Z, Liu F, Zhou M, Gong H, Tang S, Liu W, Wang B, Dong Y, Liu J, Zhou S, Xu Z, Wang S, Liu Z, Xu S, Zhang C, Wang X, Wang H, Zhang Y, Cheng Z, Chen T, Zhang Y, Hao Y, Zhang J.   +25 more
europepmc   +1 more source

Three dimensional RESURF effect in power semiconductor devices

, 2002
Ranick Ng Kian Ming
openalex   +1 more source

Purcell‐Enhanced Spectrally Precise Emission in Dual‐Microcavity Organic Light‐Emitting Diodes

Advanced Functional Materials, EarlyView.
Spectrally precise emission from broadband organic light‐emitting diodes is realized via a dual‐microcavity strategy. This architecture achieves narrowband emission (full width at half maximum, FWHM = 21 nm) with ultrapure color approaching BT.2020 by enhancing the Purcell effect via coupling of excitons with dual‐microcavity resonance.
Jun Yong Kim, Sang Youn Lee, Kwan Hyun Cho, Yun Seon Do   +3 more
wiley   +1 more source

Modeling and simulation of ZnO-based TFTs by dielectric engineering and temperature analysis for enhanced performance. [PDF]

Sci Rep
Kumar P, Askari SSA, Das MK.
europepmc   +1 more source