Results 251 to 260 of about 221,949 (346)

Advancing the Frontiers of HfO₂-Based Ferroelectric Memories: Innovative Concepts from Materials to Applications. [PDF]

Adv Mater
Zhou Z, Li L, Feng Y, Wang X, Zheng Z, Jiao L, Zheng H, Shi Y, Ang KW, Gong X.   +9 more
europepmc   +1 more source

Mesoporous Carbon Thin Films with Large Mesopores as Model Material for Electrochemical Applications

Advanced Functional Materials, EarlyView.
Mesoporous carbon thin films possessing 70 nm mesopores are prepared on titanium substrates by soft templating of resol resins with a self‐synthesized poly(ethylene oxide)‐block‐poly(hexyl acrylate) block copolymer. A strategy to avoid corrosion of the metal substrate is presented, and the films are extensively characterized in terms of morphology ...
Lysander Q. Wagner, Joshua Schober, Pascal Dippell, Chantal Glatthaar, Smail Mekhilef, David Schäfer, Hannes Hergert, Marcus Rohnke, Matthias T. Elm, Bernd M. Smarsly   +9 more
wiley   +1 more source

Surface/Interface Engineering for High-Resolution Micro-/Nano-Photodetectors. [PDF]

Nanomicro Lett
Chang J, Liu T, Geng X, Dai G, Yang L, Cheng M, Jiang L, Sun Z, Liu J, Chen W.   +9 more
europepmc   +1 more source

I-1-5 Dry etching Process of nitride semiconductor for power device

, 2013
Tomoyasu Nishimiya, Hiromichi Ogiya, Atsuki Maruno, Michihiro Hiramoto, Hirohiko Nakano, Shin‐ichi Motoyama   +5 more
openalex   +2 more sources

Selection Strategies for Flexible Pressure Sensor Electrode Materials Toward Ultrafast Response

Advanced Functional Materials, EarlyView.
This study reveals, for the first time, how the electrode–organic interface governs the temporal performance of flexible pressure sensors. By pairing high‐conductivity CVD PEDOT with commonly used metal electrodes, the authors demonstrate that interfacial energy alignment dictates microsecond‐scale response, providing a straightforward design strategy ...
Jinwook Baek, Yuxuan Zhang, Hyeondong Yang, Minyoung Kim, Pavlos P. Vlachos, Jeongok Choe, Bo‐Gyu Bok, Kejie Zhao, Han‐Wook Song, Min‐Seok Kim, Martin Byung‐Guk Jun, Sunghwan Lee   +11 more
wiley   +1 more source

Improve Intermetal Dielectric Process for HTRB Stability in Power GaN High Electron Mobility Transistor (HEMT) by unbiased-Highly Accelerated Stress Testing (uHAST). [PDF]

Micromachines (Basel)
Chuang YT, Tumilty N, Wu TL.
europepmc   +1 more source

Semiconductor Based Power Devices for Sustainable Energy

Joseph Oluwasegun Shiyanbola
openalex   +2 more sources

A New Lumped-Charge Modeling Method for Power Semiconductor Devices

, 2019
Yaoqiang Duan, Francesco Iannuzzo, Frede Blaabjerg   +2 more
openalex   +2 more sources

Dual‐Interface Engineering of the Source Electrode to Overcome the Intrinsic Injection‐Leakage Trade‐Off in Organic Schottky Barrier Transistors

Advanced Functional Materials, EarlyView.
A charge injection layer is introduced via RIE to decouple the dual functions of the source electrode: lowering contact resistance through doping to enhance charge injection, while SAM modification on the top surface minimizes leakage current. This strategy enables OSBTs to achieve a high on/off ratio with improved stability and performance.
Hye Ryun Sim, Sangjun Lee, Geon‐Hee Nam, Jieun Kwon, Junseo Kim, Syed Zahid Hassan, Dae Sung Chung   +6 more
wiley   +1 more source

Graphene-, Transition Metal Dichalcogenide-, and MXenes Material-Based Flexible Optoelectronic Devices. [PDF]

Nanomaterials (Basel)
Wang Y, Zhou G, Zhang Z, Zhu Z.
europepmc   +1 more source