Results 271 to 280 of about 221,949 (346)

Purcell-Enhanced and Tunable Single-Photon Emission from Telecom Quantum Dots in Circular Photonic Crystal Resonators. [PDF]

open access: yesACS Photonics
Barbiero A   +10 more
europepmc   +1 more source

Overcoming the Stability Issue for Hydrophobic Hole Transporting Layers Utilized in Tin‐Lead Perovskite and Tandem Solar Cells

open access: yesAdvanced Functional Materials, EarlyView.
A non‐annealed process is developed for non‐PEDOT:PSS inverted tin‐lead perovskite solar cells to attain PCE 22.67% for the PTAA‐based device. When PTAA is applied in an all‐perovskite tandem solar cell, a record efficiency of 28.14% is obtained with great stability for the efficiency maintaining 96% of its original value for 500 h under one‐sun ...
Chun‐Hsiao Kuan   +12 more
wiley   +1 more source

Total Ionizing Dose Effect Simulation Study on 130 nm CMOS Processor. [PDF]

open access: yesMicromachines (Basel)
Liu Y   +5 more
europepmc   +1 more source

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

open access: yesAdvanced Functional Materials, EarlyView.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak   +14 more
wiley   +1 more source

Single‐Crystalline Lateral p‐SnS/n‐SnSe van der Waals Heterostructures by Vapor Transport Growth with In Situ Bi Doping

open access: yesAdvanced Functional Materials, EarlyView.
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter   +4 more
wiley   +1 more source

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

open access: yesAdvanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite   +5 more
wiley   +1 more source

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