Results 21 to 30 of about 221,949 (346)

Monolithic integration of a high power semiconductor master oscillator power amplifier [PDF]

, 2015
We present a high power semiconductor Master Oscillator Power Amplifier monolithically integrated on InP, which includes a modulation section.
Esquivias Moscardo, Ignacio, Faugeron, Mickael, García Tijero, José Manuel, Krakowski, Michel, Pérez Hugalde, Carlos, Pérez Serrano, Antonio, Van Dijk, Frédéric, Vilera Suárez, María Fernanda   +7 more
core   +1 more source

A dual-grating InGaAsP/InP DFB laser integrated with an SOA for THz generation [PDF]

, 2016
We report a dual-mode semiconductor laser that has two gratings with different periods below and above the active layer. A semiconductor optical amplifier (SOA), which is integrated with the dual-mode laser, plays an important role in balancing the ...
Deng, Qiufang, Guo, Lu, Hou, Lianping, Liang, Song, Xu, Junjie, Zhu, Hongliang   +5 more
core   +1 more source

A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT [PDF]

, 2014
A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al0.25Ga0.75N) barrier layer and relies on an induced ...
Al-Khalidi, Abdullah, Brown, Raphael, Li, Xu, Macfarlane, Douglas, Ternent, Gary, Thayne, Iain, Wasige, Edward, Zhou, Haiping   +7 more
core   +1 more source

First-principles study on the electronic structure and catalytic properties of two-dimensional MX2N4 systems (M = Ti, Zr; X = Si, Ge)

Results in Physics, 2023
Recently, the two-dimensional MA2Z4 family with a seven-atom layer structure (experimentally synthesized a MoSi2N4 monolayer), which has good stability and exhibits semiconductivity, providing a platform for photocatalytic hydrolysis studies of two ...
Yi Wang, Guang Wang, Mengya Huang, Zhengli Zhang, Jihong Wang, Ding Zhao, Xiang Guo, Xuefei Liu   +7 more
doaj   +1 more source

Characterization of the in-situ degradation process of P3HT:PCBM based on hyperspectral and neural networks

Polymer Testing
In situ online observation of surface morphology during degradation processes is of paramount importance for exploring the stability of organic photovoltaic materials.
Yang Wang, Zhao Ding, Junli Li, Ting Yang, Jianfeng Chen, Lifeng Bian, Chen Yang   +6 more
doaj   +1 more source

Transport Characteristics of Interfacial Charge in SiC Semiconductor–Epoxy Resin Packaging Materials

Frontiers in Chemistry, 2022
The silicon carbide (SiC) wide bandgap (WBG) semiconductor power device has been widely applied for its excellent properties. However, the charge accumulated in the interface of SiC semiconductor-related insulation packaging may lead to serious material ...
Chi Chen, Jiaxing Li, Xia Wang, Kai Wu, Chuanhui Cheng, Chuang Wang, Yuwei Fu   +6 more
doaj   +1 more source

Recent Developments In Monolithic Phase-Locked Semiconductor Laser Arrays [PDF]

, 1984
Coherent combination of the power of several semiconductor lasers fabricated on the same substrate has been the subject of an intense research effort in recent years, the main motivation being to obtain higher power levels than those available from a ...
Kapon, E., Katz, J., Margalit, S., Yariv, A.   +3 more
core   +1 more source

Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications [PDF]

, 2022

openalex   +3 more sources

CONVERTER SOLAR RADIATION INTO ELECTRICITY TO SUPPLY THE AUTOMOTIVE SEMICONDUCTOR THERMOELECTRIC AIR CONDITIONING

Вестник Дагестанского государственного технического университета: Технические науки, 2016
The article considers the possibility to increase the efficiency of converters of solar radiation into electricity by combining constructive photoelectric effect, See-beck thermoeffect and semiconductor solar cells, which will create integrated device to
T. A. Ismailov, L. M. Ahmedova, D. V. Evdulov, O. V. Evdulov, D. A. Chelushkin   +4 more
doaj   +1 more source

Analysis and Evaluation of WBG Power Device in High Frequency Induction Heating Application

Energies, 2020
A device suitability analysis is performed herein by comparing the performance of a silicon carbide (SiC) metal-oxide-semiconductor-field-effect transistor (MOSFET) and a gallium nitride (GaN) high-electron mobility transistor (HEMT), which are wide ...
Kwang-Hyung Cha, Chang-Tae Ju, Rae-Young Kim   +2 more
doaj   +1 more source