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1986
The converter valves used in solid state based on power electronic systems are designated power semiconductor devices. Here they will be abbreviated as power semiconductors. The most important power semiconductors are silicon diodes, thyristors, and power transistors [3.9, 3.15, 3.16, 3.26, 3.27].
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The converter valves used in solid state based on power electronic systems are designated power semiconductor devices. Here they will be abbreviated as power semiconductors. The most important power semiconductors are silicon diodes, thyristors, and power transistors [3.9, 3.15, 3.16, 3.26, 3.27].
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2004
The most important step in the history of semiconductor devices was the discovery of the transistor effect in a semiconductor material by Bardeen and Brattain [1] and Shockley [2] at the end of the 1940s. This invention stimulated the further development of power semiconductor devices.
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The most important step in the history of semiconductor devices was the discovery of the transistor effect in a semiconductor material by Bardeen and Brattain [1] and Shockley [2] at the end of the 1940s. This invention stimulated the further development of power semiconductor devices.
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2015
In this chapter, the characteristics of high-voltage SiC IGBT, SiC MOSFET, SiC junction gate field-effect transistor (JFET), and low-voltage SiC MOSFET are discussed.
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In this chapter, the characteristics of high-voltage SiC IGBT, SiC MOSFET, SiC junction gate field-effect transistor (JFET), and low-voltage SiC MOSFET are discussed.
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Switching Power Semiconductor Devices
1993Power electronics use semiconductor devices operating in switching mode, i.e. in an on-off control mode. There are mainly three types of devices: diodes, bipolar and field effect transistors, thyristors or GTO (gate turn-off) thyristors.
Robert Bausière +2 more
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Automotive Power Semiconductor Devices
2005Commercially available power semiconductor devices can be categorized into several basic types such as diodes, thyristors, bipolar junction transistors (BJT), power metal oxide semiconductor field effect transistors (MOSFET), insulated gate bipolar transistors (IGBT), and gate turn-off thyristors.
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Physics of semiconductor power devices
Reports on Progress in Physics, 1982Semiconductor power devices are designed to rapidly switch or amplify high currents, to support high voltages, and to control electric power. Because of these requirements, their topographies and structures are different from those of small-signal devices. Specific designs are the result of the understanding of the physics of p-n junction HV breakdown,
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Power Electronics Semiconductor Devices
20091. Power MOSFET transistors, Pierre Aloisi.2. Insulated gate bipolar transistors (IGBT), Pierre Aloisi.3. Serial or paralleled connected power transistors, Daniel Chatroux, Jean-Luc Schanen.4. Silicon carbide devices and their applications, Marie-Laure Locatelli, Dominique Planson.5.
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Power semiconductor devices: an overview
Proceedings of the IEEE, 1988Advances in power semiconductor devices are discussed, focusing on the adaptation of silicon integrated circuit wafer processing methods to the design and fabrication of power devices. Some basic properties of power devices are reviewed, along with recent adaptations of wafer processing technology.
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