Results 61 to 70 of about 221,949 (346)

Extreme Double/Triple Asymmetric Epitaxial Structure Based Diode Lasers for High Powers and High Efficiencies

IEEE Photonics Journal, 2022
In edge-emitting high power laser diodes, the longitudinal spatial hole burning (LSHB) effect induced by the inhomogeneous photon and carrier distributions and the non-linear process, two-photon absorption (TPA), are demonstrated to the key causes of ...
Xiaolei Zhao, Siwei Zeng, Lance Sweat, Lin Zhu   +3 more
doaj   +1 more source

Copper‐based Materials for Photo and Electrocatalytic Process: Advancing Renewable Energy and Environmental Applications

Advanced Functional Materials, EarlyView.
Cu‐based catalysts as a cornerstone in advancing sustainable energy technologies are fully reviewed in this manuscript, highlighting their potential in photo‐ and electrocatalysis. It includes metallic copper, copper oxides, copper sulfides, copper halide perovskites, copper‐based metal–organic frameworks (MOFs), and covalent organic frameworks (COFs),
Jéssica C. de Almeida, Yanjie Wang, Thais A. Rodrigues, Paulo H. H. Nunes, Vagner R. de Mendonça, Paulo H. E. Falsetti, Leticia V. Savazi, Tao He, Alexandra V. Bardakova, Aida V. Rudakova, Jie Tian, Alexei V. Emeline, Osmando F. Lopes, Antonio Otavio T. Patrocínio, Jia Hong Pan, Caue Ribeiro, Detlef W. Bahnemann   +16 more
wiley   +1 more source

Review on the Thermal Models Applications in the Reliability of Power Semiconductor Device

IET Power Electronics
The power semiconductor device plays a key role in energy conversion and management, and the failure of the device would make a great economic loss.
Jun Zhang, Huixian Shen, Haiyan Sun, Zhihuan Wang   +3 more
doaj   +1 more source

Magnetic field controlled hybrid semiconductor and resistive switching device for non-volatile memory applications

AIP Advances, 2019
A magnetic-field-controlled non-volatile memory device is fabricated by coupling Hall effect and resistive switching effect. The non-volatile property of the device is due to the fact that the Hall voltage of the semiconductor changes the resistance ...
Chengyue Xiong, Ziyao Lu, Siqi Yin, Hongming Mou, Xiaozhong Zhang   +4 more
doaj   +1 more source

Simulation of a high-speed demultiplexer based on two-photon absorption in semiconductor devices [PDF]

, 2005
In this paper, we present a theoretical model of an all-optical demultiplexer based on two-photon absorption in a specially designed semiconductor micro-cavity for use in an optical time division multiplexed system. We show that it is possible to achieve
A.L. Bradley, Folliot, H. Folliot, Hori, J.F. Donegan, Krug, L.P. Barry, M. Lynch, P.J. Maguire, Saruwatari, Spirit, T. Krug, Thomsen   +12 more
core   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Increase resource power electronics module on the physics of failure method

MATEC Web of Conferences, 2014
A new approach to improving resource devices for power electronics. The numerical analysis of non-uniform temperature field of power semiconductor devices. A comparison of the intensities of the failure of a power unit with the real thermal regime of the
Kravchenko Evgeny V., Kuznetsov Geniy V.
doaj   +1 more source

Gallium Arsenide and Gallium Nitride Semiconductors for Power and Optoelectronics Devices Applications [PDF]

, 2023
Ram Chhavi Sharma, Raina Nandal, Nisha Tanwar, Reema Yadav, J.D. Bhardwaj, Amit Kumar Verma   +5 more
openalex   +1 more source

Enhancing Direct Solar Water Splitting via ALD of Multifunctional TiO2/Pt Nanoparticle Coatings With Engineered Interfaces to GaAs/GaInP Tandem Cells

Advanced Functional Materials, EarlyView.
Multifunctional atomic layer deposited coatings and interface treatments enhance direct solar water splitting on GaAs/GaInP tandem cells. Optimized TiO2/Pt nanoparticle bilayers ensure durability and catalytic efficiency with minimal optical losses, while H2 plasma pretreatments maximize photovoltage and interfacial charge extraction.
Tim F. Rieth, Verena Streibel, Oliver Bienek, Sergej Levashov, Johannes Dittloff, Kristof Möller, Johanna Eichhorn, Matthias M. May, Ian D. Sharp   +8 more
wiley   +1 more source

Measuring Terminal Capacitance and Its Voltage Dependency for High-Voltage Power Devices [PDF]

, 2009
The switching behavior of semiconductor devices responds to charge/discharge phenomenon of terminal capacitance in the device. The differential capacitance in a semiconductor device varies with the applied voltage in accordance with the depleted region ...
Funaki, Tsuyoshi, Hikihara, Takashi, Kimoto, Tsunenobu, Phankong, Nathabhat   +3 more
core   +1 more source