Results 71 to 80 of about 221,949 (346)

Unassisted Photoelectrochemical Hydrogen Production Coupled with Selective Glucose Oxidation Using Metal Halide Perovskite Photoanodes

Advanced Functional Materials, EarlyView.
A metal halide perovskite‐based photoanode integrated with a CoNiFe layered double hydroxide (LDH) cocatalyst is reported for selective glucose oxidation reaction (GOR), achieving simultaneous and unassisted photoelectrochemical hydrogen production. This system delivers high photocurrent density, excellent Faradaic efficiency of GOR, and strong techno ...
Shujie Zhou, Xu Liu, Michael Gunawan, Yihao Shan, Ming Zhang, Shaine Lucas, Adhi Satriyatama, Denny Gunawan, Ao Wang, Xiaojie Yuan, Kaiwen Sun, Rose Amal, Xiaojing Hao   +12 more
wiley   +1 more source

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

Advanced Functional Materials, EarlyView.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp, Brahmdutta Dixit, Yifei Yang, Deyuan Lyu, Thomas Peterson, Qi Jia, Yu‐Chia Chen, Jian‐Ping Wang   +7 more
wiley   +1 more source

Application Status of SiC Power Device and Its Development Tendency

Kongzhi Yu Xinxi Jishu, 2016
The representative wide bandgap semiconductor material-Silicon Carbide(SiC) has the characteristics of high breakdown voltage, high electron saturation velocity, high thermal conductivity,which can meet the requirements of power electronic device applied
QI Yu, LI Yanyong, HU Jiaxi, FAN Wei, TANG Wei   +4 more
doaj  

Design of a 2.4 kV Half‐Bridge Power Module With Chip‐Level Series‐Connected SiC MOSFETs

IET Power Electronics
Series connection of silicon carbide (SiC) metal‐oxide–semiconductor field effect transistors (MOSFETs) is a viable solution to reach blocking voltages that are not yet commercially available or limited for single‐chip devices.
Tobias Nieckula Ubostad, Yoganandam Vivekanandham Pushpalatha, Frank Mauseth, Dimosthenis Peftitsis   +3 more
doaj   +1 more source

Topology, Design, and Characteristics of a Modular, Dynamic 100 kA Surge Current Source With Adjustable Current Shape

IEEE Open Journal of Industry Applications
To guarantee sufficient surge current fault protection for power electronic converters, power semiconductors have to be tested under appropriate surge current conditions.
Stefan Wettengel, Andreas Hoffmann, Jonas Kienast, Lars Lindenmuller, Steffen Bernet   +4 more
doaj   +1 more source

FFC-NMR Power Supply with Hybrid Control of the Semiconductor Devices [PDF]

, 2023
António Roque, Duarte M. Sousa, Pedro J. Sebastião, V. Silva, Elmano Margato   +4 more
openalex   +1 more source

Ultrashort Q-switched pulses from a passively mode-locked distributed Bragg reflector semiconductor laser [PDF]

, 2012
A compact semiconductor mode-locked laser (MLL) is presented that demonstrates strong passive Q-switched mode-locking over a wide range of drive conditions.
Cheung, Flynn, G. Mezösi, Heck, Huttl, Lu, Marc Sorel, Marco Zanola, Michael J. Strain, Stolarz, Strain, Thompson, Thompson   +12 more
core   +1 more source

Reconfigurable Three‐Dimensional Superconducting Nanoarchitectures

Advanced Functional Materials, EarlyView.
3D superconducting nanostructures offer new possibilities for emergent physical phenomena. However, fabricating complex geometries remains challenging. Here 3D nanoprinting of complex 3D superconducting nanoarchitectures is established. As well as propagating superconducting vortices in 3D, anisotropic superconducting properties with geometric ...
Elina Zhakina, Luke Alexander Turnbull, Weijie Xu, Markus König, Paul Simon, Wilder Carrillo‐Cabrera, Amalio Fernández‐Pacheco, Uri Vool, Dieter Suess, Claas Abert, Vladimir M. Fomin, Claire Donnelly   +11 more
wiley   +1 more source

A remaining useful life prediction method of SiC MOSFET considering failure threshold uncertainty

IET Power Electronics
Different methods have been developed to predict power devices' remaining useful life (RUL). The existing methods need to specify the failure thresholds corresponding to failure precursors of power devices based on historical data.
Qunfang Wu, Boyuan Xu, Lan Xiao, Qin Wang   +3 more
doaj   +1 more source

Composition and Resulting Band Alignment at the TiO2/InP Heterointerface: A Fundamental Study Combining Photoemission Spectroscopy and Theory

Advanced Functional Materials, EarlyView.
The chemical composition and band alignment are systematically investigated at the TiO2/InP heterointerface. Thin TiO2 films are deposited by ALD on atomically ordered, P‐terminated p‐InP(100). By combining UPS, XPS, and ab initio molecular dynamics, the atomistic structure and electronic alignment are revealed.
Mohammad Amin Zare Pour, Muhammad Nawaz Qaisrani, Christian Höhn, Johannes Laurenz Wolf, Negin Mogharehabed, Jennifer Velazquez Rojas, Wolfram Jaegermann, Erich Runge, Roel van de Krol, Thomas Hannappel, Christian Dreßler, Agnieszka Paszuk   +11 more
wiley   +1 more source