Results 81 to 90 of about 221,949 (346)
High-temperature time-dependent dielectric breakdown of 4H-SiC MOS capacitors
Case Studies in Thermal Engineering—With the rapid applications of silicon carbide metal–oxide–semiconductor field-effect transistor (SiC MOSFET) power devices, further improving the performance of SiC MOSFET device through enhancing its gate oxide reliability is one of the crucial ...
Xinlan Hou +7 more
doaj +1 more source
Z‐Scheme Water Splitting Systems Based on Solid‐State Electron Conductors
Advanced Functional Materials, EarlyView.This review examines the latest advances in Z‐scheme overall water splitting (OWS) systems for solar hydrogen production. These systems consist of suspended or immobilized hydrogen evolution photocatalysts (HEPs) and oxygen evolution photocatalysts (OEPs).
Chen Gu +3 more
wiley +1 more source
CMOS-Compatible Room-Temperature Rectifier Toward Terahertz Radiation Detection [PDF]
, 2016 In this paper, we present a new rectifying device, compatible with the technology of CMOS image sensors, suitable for implementing a direct-conversion detector operating at room temperature for operation at up to terahertz frequencies.
De Amicis, Giovanni +5 more
core +1 more source
Advanced Functional Materials, EarlyView.The NNR‐n series of oligomeric nanographenes delivers exceptional emission performance. This work shows that this performance is originated by their ladder‐type structure, which effectively deactivates low‐frequency vibronic modes. This deactivation neglects the main pathway for non‐emissive deactivation, even in the near‐infrared region. The potential
Marcos Díaz‐Fernández +12 more
wiley +1 more source
Silicon device performance measurements to support temperature range enhancement [PDF]
Semiconductor power devices are typically rated for operation below 150 C. Little data is known for power semiconductors over 150 C. In most cases, the device is derated to zero operating power at 175 C.
Askew, Ray +3 more
core +1 more source
Graded junction termination extensions for electronic devices [PDF]
, 2006 A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices.
Isaacs-Smith, Tamara +3 more
core +2 more sources
Advanced Functional Materials, EarlyView.[001]‐oriented Sb2Se3 film with improved crystallinity and adjusted composition is achieved via a new thermal treatment approach consisting of preliminary annealing of the Sb layer before its selenization. The findings of this work demonstrate enhanced charge carriers' transportation, a stable performance, and an improvement of H2 generation from ...
Magno B. Costa +7 more
wiley +1 more source
Two dimensional thermal and charge mapping of power thyristors [PDF]
The two dimensional static and dynamic current density distributions within the junction of semiconductor power switching devices and in particular the thyristors were obtained.
Hu, S. P., Rabinovici, B. M.
core +1 more source
Low power CMOS iImage sensor for face recognition [PDF]
, 2020 Imaging system is suitable for different purposes, depending upon their final application. Digital cameras, camcorders, webcams, security cameras or infrared (IR) cameras are well-known imaging systems.
Chan, Kit Heng, Ruslan, Siti Hawa
core
Advanced Functional Materials, EarlyView.Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco +8 more
wiley +1 more source