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Press-pack IGBTs, semiconductor switches for pulse power
IEEE Conference Record - Abstracts. PPPS-2001 Pulsed Power Plasma Science 2001. 28th IEEE International Conference on Plasma Science and 13th IEEE International Pulsed Power Conference (Cat. No.01CH37255), 2002Summary form only given as follows. The semiconductor switch has been shown to be a realistic alternative to the thermionic device in pulse power applications. The introduction of new press-pack IGBT technology offers the opportunity to extend the range of high power applications for which a semiconductor switch may be considered.
F. Wakeman, W. Findlay
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A Gating Path Optimization Method for Press-Pack IGBT
2020 IEEE 1st China International Youth Conference on Electrical Engineering (CIYCEE), 2020IGBT devices are widely used in high-voltage and high-power applications. IGBT module has two kinds of packaging structure, which are welded IGBT and press-pack IGBT (PP-IGBT). Since a PP-IGBT module can integrate more chips and diode chips to obtain a large current capacity, it has been widely used in high power applications.
Huaidong Min +4 more
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Application of press-pack IGBTs in traction refurbishment
Twentieth Annual IEEE Applied Power Electronics Conference and Exposition, 2005. APEC 2005., 2005Press-pack IGBT technology has made significant advances in recent years. The availability of a wide range of products from multiple sources has now made this technology a realistic choice for both new build and refurbishment traction applications. Several case studies demonstrate the successful application of press-pack IGBTs in demanding traction ...
A. Golland, F. Wakeman
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Innovative metal system for IGBT press pack modules
ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings., 2004Two important design aspects encountered in IGBT press pack modules used for HVDC applications are short circuit failure mode (SCFM) and intermittent operating life (IOL) capabilities. The requirement that press-pack IGBT (PPI) fail safely into a short causes a design conflict with the module's desired capability to survive a high number of power ...
S. Gunturi +3 more
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Innovative press pack modules for high power IGBTs
Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216), 2002A new IGBT press pack package was developed to meet increasingly challenging requirements for high power converters, such as in power systems applications. The package offers significantly high tolerance to pressure nonuniformity and allows up to 100 kN of stacking pressure while effectively protecting sensitive silicon chips by using a flexible ...
S. Kaufmann, T. Lang, R. Chokhawala
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Managing power semiconductor obsolescence by press-pack IGBT substitution
2005 European Conference on Power Electronics and Applications, 2005Press-pack IGBTs are identified as a possible replacement for obsolete power semiconductor technology. Traction power electronic systems using thyristor technology are compared to those substituted with press-pack IGBTs, with and without additional modifications to optimise performance.
A. Golland, F. Wakeman, G. Li
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Parasitic Consideration of Package Design within Press Pack IGBT
Applied Mechanics and Materials, 2013Simulation technology provides a powerful tool for the package design. Parasitic are one of the most important factors for press pack IGBT. By the aid of the simulation software, the package parasitic is extracted and the current distribution among paralleled chips is analyzed. Simulation results confirm the theoretical analysis and verify the efficacy
Peng Zhang +9 more
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Calibration Method of Junction Temperature Measurement for Press-Pack IGBTs
IEEE Transactions on Components, Packaging and Manufacturing Technology, 2021Accurate junction temperature measurement is of great significance for the reliability assessment of power insulated-gate bipolar transistor (IGBT) devices. The $V_{\mathrm {CE}}(T)$ method is the most widely used junction temperature measurement method and is recommended by various test standards, the first step of which is the $K$ factor ...
Jie Chen +3 more
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Modelling the cauer thermal network for press pack IGBTs
2017 Sixth Asia-Pacific Conference on Antennas and Propagation (APCAP), 2017Press Pack IGBTs (PP IGBTs) have gradually applied in the high voltage and high current areas, for their high power density, double side cooling and high reliability. The cauer thermal network model of PP IGBTs is proposed based on the boundary effect according to heat spreading angle in this paper, and the difference between the IGBT and FRD chips is ...
Jinyuan Li +4 more
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4.5kV press pack IGBT designed for ruggedness and reliability
Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting., 2004A novel press pack IGBT (PPI) with a rating of up to 4500 V and 2000 A is presented. During the development of this new component, special emphasis was placed on the ease of use by system manufacturers. The mechanical design is optimized in order to facilitate the clamping of the PPI in long stacks. Even if the clamping in the stack has severe pressure
S. Eicher +6 more
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