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Long term short-circuit stability in Press-pack IGBTs
2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe), 2016The Press-pack IGBTs is ideally suited to applications where series operation is required; this quality is of particular interest for HVDC applications where several 100 devices may be required in a single switch. To ensure continued operation between maintenance cycles it is essential that the device fails to a stable short circuit.
F. Wakeman, J. Pitman, S. Steinhoff
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3-Level high power converter with press pack IGBT
2007 European Conference on Power Electronics and Applications, 2007Converteam recently has introduced the MV7000 series of medium voltage drives, designed with Press Pack IGBT (PPI) in 3-level NPC topology in the power range from 4 MW to 32 MW [3]. PPI combines the benefits of disk type device technology with state-of-the-art semiconductor technology.
Roland Jakob +3 more
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Optimization of the thermal contact resistance within press pack IGBTs
Microelectronics Reliability, 2017Abstract The research of thermal contact resistance between multi-layers within press pack IGBTs (PP IGBTs) is significant for optimizing the PP IGBTs' thermal resistance to improve reliability, as the thermal contact resistance accounts for approximately 50% of the total thermal resistance of PP IGBTs.
Erping Deng +4 more
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2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 2021
Yujie Du +6 more
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Yujie Du +6 more
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10 kV IGBT press pack modules with series connected chips
Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics, 2003A package design for a 10 kV IGBT press pack module with series connected chips was developed. IGBT press pack modules with internal series or antiseries connection are offering new opportunities and potential cost savings in different applications. The proposed package design is presented for both series as well as antiseries connection.
S. Kaufmann, F. Zwick
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Press pack IGBT: high current pulse switch transcranial magnetic simulation
7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014), 2014The press pack IGBT's have exhibited an excellent power performance at range of required pulse current shape on various industrial applications; including a repetitive transcranial magnetic stimulation (rTMS). This paper describes the design, construction, testing and operation of a 125 mm electrode diameter capsule device used in a high power pulse ...
Q. Al'Akayshee +5 more
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Reliability study and modelling of IGBT press-pack power modules
2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 2017The IGBT press-pack provides low inductance and simple module stack for high power and high voltage applications. In this work, the reliability of IGBT Press-Pack power modules is experimentally tested under RBSOA conditions to investigate their limitation and current scalability.
Hong Y. Long +3 more
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Development of high power press-pack IGBT and its applications
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400), 2002Press-pack IGBT has been developed in recent years as a superior high power IGBT device to conventional IGBT module in reliability and performance. This type of IGBT is replacing GTO or thyristor in such applications as traction, power transmission and industrial motor drive because of its excellent advantages such as high performance, high reliability,
Y. Uchida +3 more
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Optimized Design of Chips Layout in Press-Pack IGBT Module
2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe), 2019To analyze the influence of chips layout in Press-Pack IGBT modules, the current sharing, stress and temperature distribution of two types of modules with anti-parallel diodes are simulated. The results show that the case of IGBTs evenly surrounding around the diodes ensures a better current sharing, stress and temperature distribution over a wide ...
Lubin Han +4 more
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Development of Press-pack IGBT Chip for good SOA Capability
2019 3rd International Conference on Electronic Information Technology and Computer Engineering (EITCE), 2019In this paper, the advantages of press-pack IGBT in DC circuit breaker are introduced. According to the requirement of press package for IGBT chip, a cell structure with field oxide in active region was designed, and the optimal value of the field oxide length was obtained.
Li Li +5 more
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