Results 131 to 140 of about 24,609 (190)
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IEEE Microwave and Wireless Components Letters, 2022
Deep learning and artificial intelligence, in general, is advancing scientific discovery and technological inventions through its ability to extract inherently hidden features and map it to output in a highly complex multi-dimensional space. Synthesis of
Zheng Liu, E. Karahan, K. Sengupta
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Deep learning and artificial intelligence, in general, is advancing scientific discovery and technological inventions through its ability to extract inherently hidden features and map it to output in a highly complex multi-dimensional space. Synthesis of
Zheng Liu, E. Karahan, K. Sengupta
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Accuracy Evaluation of Synchronous Generator Models in PSAT
2021 IEEE 19th International Power Electronics and Motion Control Conference (PEMC), 2021The descriptions and simulations of different differential order synchronous machine models are analyzed in this paper. Focus is paid on the Power System Analyses Toolbox models in the Simulink environment (MATLAB). The response of the models on the three-phase short circuit fault is evaluated, including pros and cons of each model as well as ...
Martin Vins, Karel Nohac, Martin Sirovy
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IEEE Transactions on Circuits and Systems - II - Express Briefs, 2022
This brief proposes a broadband differential GaN power amplifier (PA) with coupled-line-based matching networks for Ku-band satellite communication. The developed matching technique can achieve flat wideband impedance matching with a compact area.
Jincheng Zhang +4 more
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This brief proposes a broadband differential GaN power amplifier (PA) with coupled-line-based matching networks for Ku-band satellite communication. The developed matching technique can achieve flat wideband impedance matching with a compact area.
Jincheng Zhang +4 more
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Radio Frequency Integrated Circuits Symposium, 2022
A 97–107 GHz power amplifier (PA) based on a stacked-FET topology is presented. In a triple-stacked-FeT structure, stacking efficiency is analyzed using four combinations of series or shunt inductors for compensating phase of impedances between stack ...
Kyunghwan Kim +5 more
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A 97–107 GHz power amplifier (PA) based on a stacked-FET topology is presented. In a triple-stacked-FeT structure, stacking efficiency is analyzed using four combinations of series or shunt inductors for compensating phase of impedances between stack ...
Kyunghwan Kim +5 more
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A D-Band Power Amplifier with 15 dBm Psat in 0.13 µm SiGe BiCMOS Technology
Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2022This paper presents a two-stage D-band power amplifier (PA) realized in 0.13 $\mu\text{m}$ silicon-germanium (SiGe) BiCMOS technology. The amplifier employs the cascode topology at both stages and achieves a saturated output power(Psat) of 15 dBm while ...
Ibrahim Kagan Aksoyak +3 more
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A 220-294 GHz Power Amplifier with 10-dBm Psat and 2.2% PAE in 250-nm InP DHBT
BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022We designed and fabricated a 300-GHz-band power amplifier (PA) with a wide bandwidth, high output power, and high power-added efficiency (PAE) in in-house 250-nm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology having an ...
Teruo Jyo +9 more
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Psychometric Testing of the Preceptor Self-Assessment Tool (PSAT)-40 for Nursing Preceptors.
Journal of Continuing Education in Nursing: Continuing Competence for the Future, 2022Background The aim of this study was to complete the third phase of development of the Preceptor Self-Assessment Tool (PSAT). Method Psychometric testing was conducted via an online Qualtrics survey with a statewide sample of 320 nurse preceptors from ...
K. L'Ecuyer +3 more
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A 130-151 GHz 8-Way Power Amplifier with 16.8-17.5 dBm Psat and 11.7-13.4% PAE Using CMOS 45nm RFSOI
Radio Frequency Integrated Circuits Symposium, 2021This paper presents a D-band linear power amplifier (PA) with high gain, high output power and high efficiency using CMOS 45nm RFSOI process. An 8-way (4-way differential) power-combining technique is implemented to increase the power amplifier linearity
Siwei Li, Gabriel M. Rebeiz
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Radio Frequency Integrated Circuits Symposium, 2021
This paper presents a 39 GHz front-end module (FEM) in 22 nm FD-SOI technology for 5G communications. The PA output stage uses a 2-stacked FET topology to achieve high output power.
Zhiwei Zong +6 more
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This paper presents a 39 GHz front-end module (FEM) in 22 nm FD-SOI technology for 5G communications. The PA output stage uses a 2-stacked FET topology to achieve high output power.
Zhiwei Zong +6 more
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BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021
This paper presents a 268-325 GHz high output power, transformer-based frequency doubler for radar applications achieving 5.2dBm saturated power (Psat) at 304 GHz and 57 GHz Psat 3 dB-bandwidth.
Sascha Breun +4 more
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This paper presents a 268-325 GHz high output power, transformer-based frequency doubler for radar applications achieving 5.2dBm saturated power (Psat) at 304 GHz and 57 GHz Psat 3 dB-bandwidth.
Sascha Breun +4 more
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