Results 171 to 180 of about 24,551 (233)

mm-Wave GaN-on-Si HEMTs with a PSAT of 3.9W/mm at 28GHz

Intelligent Memory Systems, 2023
We demonstrate GaN-on-Si HEMTs capable of meeting mm-wave requirements. We compare the large-signal performance for thin barrier AlGaN/GaN and InAlN/GaN-based HEMTs with gate lengths downscaled to 70nm at 28GHz using passive load-pull characterisation ...
R. ElKashlan, A. Khaled, S. Yadav, Hao Yu, U. Peralagu, A. Alian, N. Collaert, P. Wambacq, B. Parvais   +8 more
semanticscholar   +1 more source

A 23-30 GHz 4-Path Series-Parallel-Combined Class-AB Power Amplifier with 23 dBm Psat, 38.5% Peak PAE and 1.3° AM-PM Distortion in 40nm Bulk CMOS

Radio Frequency Integrated Circuits Symposium, 2023
This paper presents a 4-path series-parallel combined highly-efficient class-AB power amplifier (PA) with broad bandwidth and low AM-PM distortion in CMOS process. Frequency staggered tuning scheme enables a wide passband of 23-30GHz. AM-PM distortion is
Junjie Gu, Haoqi Qin, Hao Xu, Weitian Liu, Kefeng Han, Rui Yin, Lei Deng, Xiaoliang Shen, Zongming Duan, Hao Gao, Na Yan   +10 more
semanticscholar   +1 more source

A 47 GHz to 70 GHz Frequency Doubler Exploiting 2nd-Harmonic Feedback with 10.1 dBm Psat and ntotal of 22% in 65 nm CMOS

Radio Frequency Integrated Circuits Symposium, 2023
A wideband millimeter wave (mm-wave) frequency doubler (FDB) architecture is proposed, where a feedback network is employed to increase the 2nd-harmonic signal at the output.
Amin Aghighi, Mostafa Essawy, A. Natarajan   +2 more
semanticscholar   +1 more source

A Multi-Band 16–52-GHz Transmit Phased Array Employing 4 × 1 Beamforming IC With 14–15.4-dBm Psat for 5G NR FR2 Operation

IEEE Journal of Solid-State Circuits, 2022
This article introduces a millimeter-wave (mm-wave) multi-band transmit (Tx) phased-array design supp- orting the fifth-generation (5G) new radio frequency range 2 (NR FR2) bands.
Abdulrahman A. Alhamed, Gokhan Gultepe, Gabriel M. Rebeiz   +2 more
semanticscholar   +1 more source

Accuracy Evaluation of Synchronous Generator Models in PSAT

2021 IEEE 19th International Power Electronics and Motion Control Conference (PEMC), 2021
The descriptions and simulations of different differential order synchronous machine models are analyzed in this paper. Focus is paid on the Power System Analyses Toolbox models in the Simulink environment (MATLAB). The response of the models on the three-phase short circuit fault is evaluated, including pros and cons of each model as well as ...
Martin Vins, Karel Nohac, Martin Sirovy
openaire   +1 more source

Deep Learning-Enabled Inverse Design of 30–94 GHz Psat,3dB SiGe PA Supporting Concurrent Multiband Operation at Multi-Gb/s

IEEE Microwave and Wireless Components Letters, 2022
Deep learning and artificial intelligence, in general, is advancing scientific discovery and technological inventions through its ability to extract inherently hidden features and map it to output in a highly complex multi-dimensional space. Synthesis of
Zheng Liu, E. Karahan, K. Sengupta
semanticscholar   +1 more source

A 6.5-mm2 10.5–to-15.5–GHz Differential GaN PA With Coupled-Line-Based Matching Networks Achieving 10-W Peak Psat and 42% PAE

IEEE Transactions on Circuits and Systems - II - Express Briefs, 2022
This brief proposes a broadband differential GaN power amplifier (PA) with coupled-line-based matching networks for Ku-band satellite communication. The developed matching technique can achieve flat wideband impedance matching with a compact area.
Jincheng Zhang, Lihe Nie, Yong Chen, Junyan Ren, Shunli Ma   +4 more
semanticscholar   +1 more source

A 97–107 GHz Triple-Stacked-FET Power Amplifier with 23.7dB Peak Gain, 15.1dBm PSAT, and 18.6% PAEMAX in 28-nm FD-SOI CMOS

Radio Frequency Integrated Circuits Symposium, 2022
A 97–107 GHz power amplifier (PA) based on a stacked-FET topology is presented. In a triple-stacked-FeT structure, stacking efficiency is analyzed using four combinations of series or shunt inductors for compensating phase of impedances between stack ...
Kyunghwan Kim, Kangseop Lee, Seung-Uk Choi, Ji-Seong Kim, Chan-Gyu Choi, Ho-Jin Song   +5 more
semanticscholar   +1 more source

A D-Band Power Amplifier with 15 dBm Psat in 0.13 µm SiGe BiCMOS Technology

Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2022
This paper presents a two-stage D-band power amplifier (PA) realized in 0.13 $\mu\text{m}$ silicon-germanium (SiGe) BiCMOS technology. The amplifier employs the cascode topology at both stages and achieves a saturated output power(Psat) of 15 dBm while ...
Ibrahim Kagan Aksoyak, Matthias Möck, M. Kaynak, A. Ulusoy   +3 more
semanticscholar   +1 more source

A 220-294 GHz Power Amplifier with 10-dBm Psat and 2.2% PAE in 250-nm InP DHBT

BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022
We designed and fabricated a 300-GHz-band power amplifier (PA) with a wide bandwidth, high output power, and high power-added efficiency (PAE) in in-house 250-nm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology having an ...
Teruo Jyo, H. Hamada, M. Nagatani, H. Wakita, Ibrahim Abdo, M. Mutoh, Y. Shiratori, K. Okada, Atsushi Shirane, Hiroyuki Takahashi   +9 more
semanticscholar   +1 more source