Results 41 to 50 of about 74,222 (311)

Planar Solid‐State Nanopores Toward Scalable Nanofluidic Integration Based on CMOS Technology

open access: yesAdvanced Engineering Materials, EarlyView.
We present a scalable silicon‐based fabrication strategy for planar solid‐state nanopores to enable their integration with complex nanofluidic systems. Prototype devices demonstrate normal voltage‐current characteristics, good noise performance, and appreciable streaming currents. Our CMOS‐compatible fabrication process offers precise geometric control
Ngan Hoang Pham   +7 more
wiley   +1 more source

Collaborative Synchronization Digital Control for Double Hydraulic Cylinders

open access: yesAdvances in Mechanical Engineering, 2014
By researching the synchronization motion of double hydraulic cylinders controlled by high-speed on-off valve, the paper aims to solve the shortage of current hydraulic synchronization system with low synchronization precision. The flow characteristic of
Zhi-hao Liu   +5 more
doaj   +1 more source

Pulse-Width Modulation of Z-Source Inverters

open access: yes, 2005
Z-Source inverters have recently been proposed as an alternative power conversion concept as they have both voltage buck and boost capabilities. These inverters use a unique impedance network, coupled between the power source and converter circuit, to ...
Chua, G.T.   +4 more
core   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Symmetrical Cascaded Switched-Capacitor Multilevel Inverter Based on Hybrid Pulse Width Modulation

open access: yesEnergies, 2021
Multilevel inverters have been widely used in various industrial applications such as renewable energy generation and electric vehicles. An improved circuit of symmetrical cascaded switched-capacitor multilevel inverter is proposed so that the reactive ...
Lingling Cao   +3 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Microenvironmental Reprogramming by 3D Anisotropic Cardiac Extracellular Matrix Induces Nuclear Remodeling and Epigenetic Maturation of Chemically Induced Cardiomyocytes

open access: yesAdvanced Functional Materials, EarlyView.
A 3D anisotropic hydrogel derived from heart extracellular matrix guides cytoskeletal alignment and nuclear remodeling in reprogrammed cardiomyocyte‐like cells. This study reveals how matrix alignment modulates nuclear envelope dynamics and chromatin state, triggering transcriptional and functional maturation.
Seung Ju Seo   +7 more
wiley   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

open access: yesAdvanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu   +17 more
wiley   +1 more source

Load sensitive control characteristics of a novel two-dimensional pulse width modulated variable mechanism

open access: yesAdvances in Mechanical Engineering
Load sensing technology is a typical hydraulic technology that automatically meets load requirements by adjusting the pressure and flow at the pump outlet.
Wu Jian, Ruan Jian, Ren Yan
doaj   +1 more source

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