Results 71 to 80 of about 7,956,239 (250)

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Beam shaping techniques for pulsed laser ablation in liquids: Unlocking tunable control of nanoparticle synthesis in liquids

Beilstein Journal of Nanotechnology
Nanoparticle synthesis via pulsed laser ablation in liquids has gained prominence as a versatile and environmentally friendly approach for producing ligand-free colloids with controlled composition, size, and morphology.
Sergio Molina-Prados, Nadezhda M. Bulgakova, Alexander V. Bulgakov, Jesus Lancis, Gladys Mínguez Vega, Carlos Doñate-Buendia   +5 more
doaj   +1 more source

Investigation of atom arrangement and defects evolution in Ni–Co alloy atomic-precision electrochemical 3D printing using molecular dynamics

Materials & Design
Electrochemical 3D printing deposition, is becoming a key technology for fabricating metallic structure at the nanoscale. However, precise deposition of Ni–Co alloys faces numerous challenges, regarding the effects of physicochemical reactions on atomic ...
Honggang Zhang, Kai Chen, Haibin Liu
doaj   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

Advanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg, Thomas W. Pfeifer, Chuanzhen Zhou, Yong Kyu Choi, Duk‐Hyun Choe, Patrick E. Hopkins, Jon F. Ihlefeld   +6 more
wiley   +1 more source

High field performance of Si-doped n-AlN layers grown using pulsed MOCVD

Applied Physics Express
We report on the study of high-field performance of Si-doped n -AlN layers that were grown using a pulsed metalorganic chemical vapor deposition (PMOCVD) process.
Abdullah Al Mamun Mazumder, Tariq Jamil, Mafruda Rahman, Muhammad Ali, Grigory Simin, Asif Khan   +5 more
doaj   +1 more source

DC current induced metal-insulator transition in epitaxial Sm0.6Nd0.4NiO3/LaAlO3 thin film

AIP Advances, 2014
The metal-insulator transition (MIT) in strong correlated electron materials can be induced by external perturbation in forms of thermal, electrical, optical, or magnetic fields.
Haoliang Huang, Zhenlin Luo, Yuanjun Yang, Yu Yun, Mengmeng Yang, Dechao Meng, Haibo Wang, Sixia Hu, Jun Bao, Yalin Lu, Chen Gao   +10 more
doaj   +1 more source

Quantifying Subsurface Weak in‐Plane Magnetization of Mixed Phase BiFeO3 by Scanning Nitrogen Vacancy Magnetometry

Advanced Functional Materials, EarlyView.
We use scanning nitrogen vacancy magnetometry to directly image the weak in‐plane magnetic moments in mixed phase BiFeO3 at the nanoscale and quantify the local magnetic moments to be 18.8±2.0 μB/nm2 in the rhombohedral‐like phase and 1.5±0.6 μB/nm2 in the well‐known non‐magnetic tetragonal‐like phase.
Lei Wang, Zhewen Xu, Yuwen Xu, Björn Josteinsson, Simon Josephy, Dawei Zhang, Yunlong Sun, Heung‐Sik Park, Jihun Kim, Kanghyun Chu, Kyung Song, Danyang Wang, Chan‐Ho Yang, Andrea Morales, Jan Seidel   +14 more
wiley   +1 more source

Pulsed DC Sputter Deposition of Stable Turbostratic Boron Nitride Thin Films

Advanced Materials Interfaces
Boron nitride (BN) is considered for several applications in microelectronics, such as thermal management, optoelectronics, or as memristors. BN can be deposited with different deposition methods, but any integration in the back‐end‐of‐the‐line limits ...
Josef Schätz, Michael Krenzer, Tim Schaffus, Martin Otto, Fabian Kühnel, Fabian Streb, Günther Benstetter, Georg S. Duesberg, Stephan Pindl, Max C. Lemme   +9 more
doaj   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source

National Atmospheric Deposition Program 2011 Annual summary [PDF]

, 2012
is peer reviewedSubmitted by Susan Braxton (braxton@illinois.edu) on 2013-01-29T22:55:31Z No. of bitstreams: 1 2011as.pdf: 4443124 bytes, checksum: 1e2ff568a6e350fe41bba46c81de3531 (MD5)Made available in DSpace on 2013-01-29T22:55:31Z (GMT). No.
National Atmospheric Deposition Program
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