Results 41 to 50 of about 20,488 (265)

Uniform Amorphization of Crystalline Silicon Surfaces Enabled by Deep Ultraviolet Femtosecond Laser Pulses

Advanced Engineering Materials, EarlyView.
Deep‐UV (258 nm) femtosecond pulses enable uniform amorphous silicon writing on Si(100)/(111) with a six‐fold larger fluence amorphization window than NIR methods. Optimized fluence and overlap yield 20–45 nm uniform and continuous amorphous layers. Microscopy shows sharp interfaces, and real‐time reflectivity reveals nanosecond melt–resolidification ...
Wissal Benali, Magali Gregoire, Matys Guyard, Tatiana Itina, David Grojo, Pol Sopeña   +5 more
wiley   +1 more source

Nd:YAG infrared laser as a viable alternative to excimer laser: YBCO case study

Scientific Reports, 2023
We report on the growth and characterization of epitaxial YBa $$_{2}$$ 2 Cu $$_{3}$$ 3 O $$_{7-\delta }$$ 7 - δ (YBCO) complex oxide thin films and related heterostructures exclusively by Pulsed Laser Deposition (PLD) and using first harmonic Nd:Y $$_{3}$
Sandeep Kumar Chaluvadi, Shyni Punathum Chalil, Federico Mazzola, Simone Dolabella, Piu Rajak, Marcello Ferrara, Regina Ciancio, Jun Fujii, Giancarlo Panaccione, Giorgio Rossi, Pasquale Orgiani   +10 more
doaj   +1 more source

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

Advanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite, Lilia Huynh, Natascha Gray, Quintin N. Meier, Marta D. Rossell, Morgan Trassin   +5 more
wiley   +1 more source

Study of a Graphene Saturable Absorber Film Fabricated by the Optical Deposition Method

IEEE Photonics Journal, 2019
A film composed of graphene saturable absorber ($GSA$) prepared for a passive mode-locking (PML) fiber laser is successfully fabricated by an optical deposition method.
Xinyue Zhu, Shufen Chen
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Diffractive shaping of excimer-laser beams for pulsed laser deposition [PDF]

Journal of the European Optical Society-Rapid Publications, 2011
We present a beam-shaping system for a pulsed laser deposition setup. This system is based on two diffractive beam-splitter gratings and is able to produce 2 × 2 mm2 flat-top distributions of UV light with a fluence of 3 J/cm2 on the target some 30 cm ...
Kekkonen V., Hakola A., Kajava T.
doaj   +1 more source

Layer-By-Layer Growth for Pulsed Laser Deposition [PDF]

Phase Transitions, 2002
Pulsed laser deposition (PLD) is a popular growth method, which has been successfully used for fabricating thin films. Compared to continuous deposition (like molecular beam epitaxy) the pulse intensity can be used as an additional parameter for tuning the growth behavior, so that under certain circumstances PLD improves layer-by-layer growth.
Hinnemann, Berit, Westerhoff, Frank, Wolf, Dietrich   +2 more
openaire   +2 more sources

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

DEVICE FOR INVESTIGATION OF MAGNETRON AND PULSED-LASER PLASMA

Приборы и методы измерений, 2015
Various modifications of complex pulsed laser and magnetron deposition thin-film structures unit are presented. They include joint and separate variants of layer deposition.
A. P. Burmakov, V. A. Zaikov, F. F. Komarov, O. R. Lyudchik, D. A. Saladukha   +4 more
doaj  

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source