Results 191 to 200 of about 967,429 (300)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Entanglement and electronic coherence in attosecond molecular photoionization. [PDF]

Nature
Koll LM, Suñer-Rubio AJ, Witting T, Bello RY, Palacios A, Martín F, Vrakking MJJ.   +6 more
europepmc   +1 more source

Biomimetic Nanovaccine Integrating Dendritic Cell Exosomes with Tumor Cell Membranes for Sustained Prophylaxis Against Glioblastoma

Advanced Functional Materials, EarlyView.
We have developed DEX/GM, an all‐natural, personalizable hybrid vaccine designed by coating dendritic cell‐derived exosomes (DEX) onto tumor cell membranes (GM) for sustained prophylaxis against glioblastoma (GBM). ABSTRACT Glioblastoma (GBM), one of the most aggressive and lethal brain tumors, remains incurable with a poor clinical prognosis.
Shanshan Li, Dongya Zhang, Shiyu Wang, Changhe Pang, Meng Zheng, Bingyang Shi, Yan Zou   +6 more
wiley   +1 more source

DNA damage and cell death induced by exposure to ultra-high dose rate low-dose pulsed X-rays emitted from a kilojoule plasma focus device. [PDF]

Biol Res
Araya H, Jain J, Andaur R, Moreno J, Davis S, Diaz P, Velásquez E, Orellana J, Ríos M, Toro J, Orellana-Serradell O, Fierro C, Soto L, Marcelain K.   +13 more
europepmc   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Optimization of ultrafast laser ablation of stainless steel in burst mode based on experimentally validated simulations and analytical modelling. [PDF]

Sci Rep
Omeñaca L, Olaizola SM, Rodríguez A, Gomez-Aranzadi M, Ayerdi I, Castaño E.   +5 more
europepmc   +1 more source

A New Threshold Switching Device With Tunable Negative Differential Resistance Based on ErMnO3 Polymorphs

Advanced Functional Materials, EarlyView.
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu, Florian Maudet, Thanh Luan Phan, Wassim Hamouda, Richard Schroedter, Ahmet Samil Demirkol, Ronald Tetzlaff, Veeresh Deshpande, Catherine Dubourdieu   +8 more
wiley   +1 more source

Tailoring electron bunch quality in laser-plasma acceleration: a comparative study of Bessel-Gaussian and Gaussian laser profiles under variable plasma density geometries. [PDF]

Sci Rep
Khooniki R, Fallah R, Khorashadizadeh SM, Niknam AR.   +3 more
europepmc   +1 more source

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

Advanced Functional Materials, EarlyView.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit, Yifei Yang, Shawn Li, Yu‐Chia Chen, Qi Jia, Jian‐Ping Wang   +5 more
wiley   +1 more source

Nonvolatile Reconfigurable Synthetic Antiferromagnetic Devices Induced by Spin-Orbit Torque for Multifunctional In-Memory Computing. [PDF]

Nanomaterials (Basel)
Song M, Liu J, Zhu Z.
europepmc   +1 more source