MBE‐Grown ScAlN‐on‐Si Films: Enhancing In‐Plane Crystallinity for Extensional Mode BAW Resonators
The achievement of in‐plane single crystallinity and a high piezoelectric modulus in epitaxially grown ScAlN films on AlN‐buffered Si (111) enables extensional mode ScAlN‐on‐Si bulk acoustic wave (BAW) resonators with an ultra‐high Q of ≈97k at 70.28 MHz, resulting in a frequency‐Q product of ≈6.86 × 1012, suitable for emerging wireless technologies ...
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