Results 221 to 230 of about 168,451,492 (297)

Q‐LEAP: Millisecond Hyperdimensional Optimization for Full‐Spectrum Optical Metamaterials

open access: yesAdvanced Science, EarlyView.
Q‐LEAP integrates physics‐informed residual machine learning with factorization‐machine‐encoded quantum annealing to design full‐spectrum optical metamaterials. It explores a 2108 design space and, in a single 2.56 ms annealing step, reaches 85.83% of the theoretical FoM limit, enabling selective 5‐8 µm emission with 3–5 and 8–14 µm suppression and ∼40×
Zikang Guo   +3 more
wiley   +1 more source

Excitation‐Selective Hydrochromic Upconversion in Zero‐Dimensional Metal Halides

open access: yesAdvanced Science, EarlyView.
Excitation wavelength dictates whether moisture speaks. In zero‐dimensional metal halides, the same humidity leaves the upconversion emission unchanged under 980 nm excitation yet triggers a distinct green‐to‐red shift under 1550 nm. This excitation‐selective hydrochromism, governed by the absorption at each wavelength, enables stimulus‐dependent ...
Joo Hyeong Han   +6 more
wiley   +1 more source

Excellent Thermoelectric Performance Realized in SnSe Materials via Chemical Bond Tailoring Using GeTe as Molecule Scissors

open access: yesAdvanced Science, EarlyView.
The GeTe acting as “molecule scissors” can tailor chemical bond, the breaking of Ag‐Se bonds and the formation of Ge‐Se bonds occur in the A‐SnSe matrix, along with the formation of Ag2Se precipitates. This process helps to optimize the thermoelectric properties, and also improves its mechanical properties to a certain extent.
Xing Yang   +8 more
wiley   +1 more source

SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range

open access: yesAdvanced Electronic Materials, EarlyView.
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel   +6 more
wiley   +1 more source

Silicon Nitride Resistive Memories

open access: yesAdvanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis   +7 more
wiley   +1 more source

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