Results 231 to 240 of about 168,451,492 (297)

Engineering a Correlated Narrow‐Gap Semiconductor: Effects of Ga Substitution in EuZn2P2

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT The effect of Ga substitution on the electronic, magnetic, and low‐energy responses of the Zintl phase EuZn2P2${\rm EuZn}_2 {\rm P}_2$ is investigated by electrical transport, electron spin resonance (ESR), and terahertz time‐domain spectroscopy (THz‐TDS). Incorporating Ga into EuZn2P2${\rm EuZn}_2 {\rm P}_2$ (EuZn1.8Ga0.2P2${\rm EuZn}_{1.8} {\
Mateus Dutra   +13 more
wiley   +1 more source

Enhanced Synthesis of Cs2AgBiBr6 Single Crystals via Controlled Cooling for Enhanced Dual‐Band Light Detection

open access: yesAdvanced Electronic Materials, EarlyView.
This work presents a dual‐band photodetector based on the large‐scale, precise synthesis of Cs2AgBiBr6 single crystals. A rapid and efficient synthesis method is demonstrated, yielding high‐quality Cs2AgBiBr6 crystals with an average size of 2 × 2 × 1.5 mm3 and a production yield of 12.66%.
Yezhan Li   +9 more
wiley   +1 more source

Pure Theory of Law and Statutory Interpretation

open access: yesThe Annals of Legal Philosophy, 1968
openaire   +1 more source

Electron Transport in Quantum Dot Light‐Emitting Diodes

open access: yesAdvanced Electronic Materials, EarlyView.
This work reveals that electron transport in core/multi‐shell quantum dots is severely hindered by traps located at the core‐shell interface. These traps follow a Gaussian energy distribution with a density of approximately 1023 m−3 and a common energy level of 4.0 eV below the vacuum level.
Shuxin Li   +8 more
wiley   +1 more source

Impact of Rapid Thermal Annealing on the Structural and Piezoelectric Properties of AlN Thin Films

open access: yesAdvanced Electronic Materials, EarlyView.
Aluminum nitride (AlN) is a biocompatible piezoelectric material suitable for energy harvesting in MEMS resonators. Through rapid thermal annealing, a threshold for CMOS‐compatible processes is established. AlN improved its crystallinity and enhanced the piezoelectric coefficient by ∼160%. Devices show an improvement in the electromechanical properties
Laura Mazón‐Maldonado   +7 more
wiley   +1 more source

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