Results 41 to 50 of about 482 (171)

An investigation on the cyclic temperature-dependent performance behaviors of ultrabright air-stable QLEDs

Scientific Reports, 2023
AbstractThe aerobic and thermal stability of quantum-dot light-emitting diodes (QLEDs) is an important factor for the practical applications of these devices under harsh environmental conditions. We demonstrate all-solution-processed amber QLEDs with an external quantum efficiency (EQE) of > 14% with almost negligible efficiency roll-off (droop) and
Saeedeh Mokarian Zanjani, Sadra Sadeghi, Afshin Shahalizad, Majid Pahlevani   +3 more
openaire   +4 more sources

“Shadow Mask‐Based RGB Color Patterning in QLED Panels via Selective Quenching by Metals”

Small Methods, EarlyView.
A shadow mask‐based RGB color‐patterning approach for QLED panels is presented, in which ultrathin metal layers (1–2 nm) are deposited through shadow masks to selectively quench the luminescence of QD layers in a tandem stack. This enables different regions to emit different colors under electrical bias, offering a scalable route compatible with ...
Bhuiyan Saad Bin Mobarak, Fatemeh Samaeifar, Atefeh Ghorbani, Tiancheng Xu, Hany Aziz   +4 more
wiley   +1 more source

A nanocrystal-based PN junction model for quantum dot light-emitting diodes

Light: Science & Applications
The PN junction of semiconductors plays an important role in designing and developing light-emitting diodes. In contrast, the characteristics of PN junctions in quantum dot light-emitting diodes (QLED) have been less discussed.
Hui Bao, Seyed Mehdi Sattari-Esfahlan, Haizheng Zhong   +2 more
doaj   +1 more source

Microcavity‐Enhanced High‐Radiance Infrared Lead Sulphide Colloidal Quantum Dot Light‐Emitting Diodes on Silicon

Advanced Photonics Research, Volume 7, Issue 8, August 2026.
This study introduces top‐emission shortwave infrared light‐emitting diodes utilizing colloidal PbS quantum dots on silicon substrates. By integrating optimized transparent electrodes within a resonant microcavity, the devices achieve highly directional emission and exceptional thermal management, yielding a record‐high radiance exceeding 100 W sr−1 m ...
Aditya Malla, Mariona Dalmases, Rajesh Bera, Manuela De Franco, Gerasimos Konstantatos   +4 more
wiley   +1 more source

Dual‐Function Hole Injection Layer Created via p‐Type Doping for High‐Performance InP‐Based Quantum‐Dot Light‐Emitting Diode

Advanced Optical Materials, Volume 14, Issue 28, 24 July 2026.
A crosslinkable hole injection layer (HIL) is developed by incorporating the TPFB p‐type dopant into a VNPB host, which produces a robust network upon annealing at 200°C. When integrated into QLED devices, this engineered HIL significantly suppresses leakage current and enhances charge balance, remarkably improving the external quantum efficiency ...
Juwan Lee, Jeong Ha Hwang, Sinhui Min, Heeeun Kang, Min Jung Choi, Jaehoon Lim, Jinseck Kim, Donggu Lee   +7 more
wiley   +1 more source

Exploring the Potential of Zero‐Dimensional Carbon Nanomaterials in Photoluminescent, Electrochemiluminescent and Electrochemical Sensors

Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.
Zero‐dimensional carbon nanomaterials are presented as multifunctional platforms linking structure, property, and sensing performance. Surface engineering and heteroatom doping modulate electron‐transfer and luminescent behavior, enabling electrochemical, photoluminescent, and electrochemiluminescent detection. Fundamental design principles, analytical
Gustavo Martins, Jeferson Luiz Gogola, Ava Gevaerd, Cristiane Kalinke, Paulo Roberto de Oliveira, Fabio Roberto Caetano, Bruno Campos Janegitz, Márcio Fernando Bergamini, Luiz Humberto Marcolino‐Junior   +8 more
wiley   +1 more source

Efficient Quantum Dot Light-Emitting Diodes With DAA Doped Electron Transport Layer

IEEE Journal of the Electron Devices Society
Zinc oxidenanoparticles (ZnO NPs) is widely used as electron transport layer material in quantum dot light-emitting diodes (QLED) due to its high carrier mobility, unique photoelectric properties and good stability.
Haomin Chen, Qunying Zeng, Yangbin Zhu, Tuo Wu, Yijie Fan, Tailiang Guo, Hailong Hu, Fushan Li   +7 more
doaj   +1 more source

Solution-processed quantum-dot light-emitting diodes combining ultrahigh operational stability, shelf stability, and luminance

npj Flexible Electronics, 2022
The shelf-stability issue, originating from the ZnO-induced positive aging effect, poses a significant challenge to industrializing the display technology based on solution-processed quantum-dot light-emitting diodes (QLEDs).
Zi Ye, Mengyu Chen, Xingtong Chen, Wenchen Ma, Xiaojuan Sun, Longjia Wu, Xiongfeng Lin, Yu Chen, Song Chen   +8 more
doaj   +1 more source

Surface engineering of ZnO nanoparticles with diethylenetriamine for efficient red quantum-dot light-emitting diodes

iScience, 2022
Summary: Due to the outstanding electron injection/transport capability of ZnO nanoparticles (NPs), quantum-dot light-emitting diodes (QLEDs) are commonly constructed by employing a hybrid device structure with ZnO electron-transporting layer and organic
Dandan Zhang, Yan-Hua Liu, Lianqing Zhu
doaj   +1 more source

Enhancing the performance of CdSe/ZnS quantum-dot light-emitting diodes by utilizing hole injection layers fabricated with a solution-processed mixture of vanadium oxide and molybdenum oxide

Journal of Information Display
We developed a high-performance CdSe/ZnS quantum-dot light-emitting diode (QLED) incorporating a hole injection layer (HIL) composed of a solution-processed vanadium oxide (VO) and molybdenum oxide (MoO) mixture.
Suyoung Kim, Chang-Kyo Kim, Honyeon Lee
doaj   +1 more source