Results 71 to 80 of about 1,687 (201)
GaAs optoelectronic neuron arrays [PDF]
, 1993 A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for
Grot, Annette +3 more
core
Unperceivable Designs of Wearable Electronics
Advanced Materials, Volume 37, Issue 49, December 10, 2025.Unperceivable wearable technologies seamlessly integrate into everyone's daily life, for healthcare and Internet‐of‐Things applications. By remaining completely unnoticed both visually and tactilely, by the user and others, they ensure medical privacy and allow natural social interactions.
Yijun Liu +2 more
wiley +1 more source
Small Structures, Volume 6, Issue 12, December 2025.A deep‐blue thermally activated delayed fluorescence emitter, as a sensitizer, doped in the hole transport layer of quantum‐dot LEDs to trigger long‐range resonant energy transfer to the emission layer, which leads to the reduced efficiency roll‐off and the significant improvement in power efficiency by a factor of 1.44.
Qiyin Chen +4 more
wiley +1 more source
Effect of magnesium doping on NiO hole injection layer in quantum dot light-emitting diodes
NanophotonicsThis study reports on the fabrication of quantum dot light-emitting diodes (QLEDs) with an ITO/Ni1−x MgxO/SAM/TFB/QDs/ZnMgO/Al structure and investigates the effects of various Mg doping concentrations in NiO on device performance.
Lee Nayoon +9 more
doaj +1 more source
Expansion formulas for terminating balanced F-4(3)-series from the Biedenharn-Elliot identity for su(1,1) [PDF]
, 2004 A
Lievens, Stijn
core +1 more source
Advanced Electronic Materials, Volume 11, Issue 18, November 4, 2025.Contrary to expectations, the electron is identified as a leakage that plays a leading role in limiting the efficiency of QLEDs with organic ETLs. By using a multilayer ETL configuration that includes electron blocking interfaces, electron leakage can be reduced and EQE substantially increased, reaching 10%, the highest for a green QLED with an ...
B. S. B. Mobarak, Hany Aziz
wiley +1 more source
Advanced Electronic Materials, Volume 11, Issue 19, November 18, 2025.Although holding great promise for next‐generation displays, quantum dot light‐emitting diodes (QLEDs) face challenges in operational stability and shelf‐storage consistency. This review systematically summarizes recent advances in understanding complex degradation mechanisms during operation as well as storage and strategies to enhance device ...
Wenxin Lin +4 more
wiley +1 more source
High efficiency quantum dot light-emitting diodes with femtosecond laser post-treatment
AIP AdvancesQuantum dot light-emitting diodes (QLEDs), as an emerging display technology, have garnered widespread attention due to their excellent color rendering, high efficiency, and long lifespan.
Dingke Wang +6 more
doaj +1 more source
Laser &Photonics Reviews, Volume 19, Issue 22, November 19, 2025.“Exploring the Recent Progress in InP Quantum Dots and QLEDs: Advances in Synthesis, Architecture, and Applications” this Review Provides a Comprehensive Examination of the Latest Advancements in Indium Phosphide (InP)‐based Quantum Dots (QDs), Highlighting Their Potential as Cadmium‐free Alternatives for Quantum Dot Light‐emitting Diodes (QLEDs), and ...
Awais Ali +7 more
wiley +1 more source
Eco-friendly quantum-dot light-emitting diode display technologies: prospects and challenges
Opto-Electronic ScienceEco-friendly quantum-dot light-emitting diodes (QLEDs), which employ colloidal quantum dots (QDs) such as InP, and ZnSe, stand out due to their low toxicity, color purity, and high efficiency.
Peili Gao +6 more
doaj +1 more source