Results 21 to 30 of about 284 (137)

Highly flexible, full-color, top-emitting quantum dot light-emitting diode tapes [PDF]

, 2013
Date of Conference: 8-12 Sept. 2013We report flexible tapes of high-performance, top-emitting, quantum dot based, light-emitting diodes (QLEDs) with multicolor emission, actively working even when flexed.
Hilmi Volkan Demir, Demir, Hilmi Volkan, Swee Tiam Tan, Evren Mutlugun, Zhao, Y., Gao, Y., Xuyong Yang, Xiao Wei Sun, Tan, S.T., Sun X.W., Yang X., Yuan Gao, Mutlugün, Evren, Yongbiao Zhao   +13 more
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Top-emitting quantum-dot light-emitting diodes with all the p-i-n functional layers deposited by solution processes [PDF]

, 2017
A green top-emitting quantum-dot light-emitting diode (TQLE) with conventional structure is demonstrated in this study with all its functional layers, including hole transportation layer, emitting layer and electron transportation layer, fabricated by ...
Kwok, Hoi Sing, Jiang, Yibin, Chen, Shuming   +2 more
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Top-Emission ZnSeTe/ZnSe/ZnS-Based Blue Quantum Dot Light-Emitting Diodes with Enhanced Chroma Efficiency [PDF]

, 2023
A high-performance quantum dot light-emitting diode (QLED) with heavy metal free (HMF) quantum dots (QDs) is urgently needed for its application in next-generation eco-friendly displays.
Xiaoguang Xu (1731601), Yanzhao Li (4527259), Maocheng Jiang (12462603), Zhuo Chen (135585), Xinguo Li (5483138), Chen Pei (14724126), Yuanming Zhang (188565), Dong Li (212687), Jingwen Feng (11377656), Li Zhou (54356)   +9 more
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High-Performance Quantum-Dot Light-Emitting Transistors Based on Vertical Organic Thin-Film Transistors [PDF]

, 2019
In this work, a novel vertical quantum-dot light-emitting transistor (VQLET) based on a vertical organic thin-film transistor is successfully fabricated. Benefiting from the new vertical architecture, the VQLET is able to afford an extremely high current
Yuan Fang, Xiaomin Wu (451328), Yujie Yan, Daobing Hu, Qizhen Chen (4089988), Daobing Hu (7413389), Yujie Yan (4509160), Shuqiong Lan (3109317), Jianfeng Zhong, Yuan Fang (132924), Shuqiong Lan, Jianfeng Zhong (2852783), Huipeng Chen (610874), Huipeng Chen, Tailiang Guo (2562676), Dongxu Lv (2605012), Dongxu Lv, Tailiang Guo, Xiaomin Wu, Qizhen Chen   +19 more
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Bright Inverted Quantum-Dot Light-Emitting Diodes By All-Solution Processing [PDF]

, 2018
An inverted red quantum dot light-emitting diode (QLED) with peak brightness of 75444 cd m-2 was achieved by all solution-processing, thanks to the enhanced coverage of uniform hydrophilic poly(ethylenedioxythiophene)/polystyrenesulfonate (PEDOT:PSS ...
Triana, Manuel A., Zhang, Dandan, Zhai, Tianshu, Chen, Hao, Camargo, Rubén J.   +4 more
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Light-Emitting Devices Based on Type-II InP/ZnO Quantum Dots [PDF]

, 2019
One of the major challenges for present-day quantum dot light-emitting diode (QLED) technology is the transition from toxic heavy metal to “green” material-based devices.
Houman Bahmani Jalali (5065790), Houman Bahmani Jalali, Rustamzhon Melikov (4353319), Onuralp Karatum, Sedat Nizamoglu (1937647), Sedat Nizamoglu, Sadra Sadeghi, Sadra Sadeghi (4854925), Rustamzhon Melikov, Onuralp Karatum (6390869), Shashi Bhushan Srivastava (6390872), Shashi Bhushan Srivastava   +11 more
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P‐132: Carriers Transport Dynamics in Quantum‐Dot Light‐Emitting Diode by Transient Electroluminescence Analysis [PDF]

, 2023
The outstanding performance of quantum dots light emitting diodes (QLED), like high color purity, high brightness, high efficiency, and low fabrication cost, has attracted significant attention from academic researchers and industry.
Chengbin Kang, Kang, Chengbin, Zebing Liao, Kumar Mallem, Song, Jianxin, Prodanov, Maksym F., Maksym F. Prodanov, Vashchenko, Valerii V., Mallem, Kumar, Yiyang Gao, Gao, Yiyang, Srivastava, Abhishek K., Abhishek K. Srivastava, Valerii V. Vashchenko, Jianxin Song, Liao, Zebing   +15 more
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Electroluminescence efficiency enhancement in quantum dot light-emitting diodes by embedding a silver nanoisland layer [PDF]

, 2015
A colloidal quantum dot light-emitting diode (QLED) is reported with substantially enhanced electroluminescence by embedding a thin layer of Ag nanoislands into hole transport layer.
Sun X. W., Dang, Cuong, Hilmi Volkan Demir, Demir, Hilmi Volkan, Zhang, Kang, Mutlugün, E., Evren Mutlugun, Hernandez-Martinez, P. L., Kang Zhang, Yang, X., Yang, Xuyong, Pedro Ludwig Hernandez‐Martinez, Xuyong Yang, Xiao Wei Sun, Hernandez-Martinez, Pedro Ludwig, Cuong Dang, Zhang, K., Mutlugun, Evren, Dang C., Sun, Xiao Wei   +19 more
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Unraveling the efficiency losses and improving methods in quantum dot-based infrared up-conversion photodetectors

Opto-Electronic Science
Quantum dot-based up-conversion photodetector, in which an infrared photodiode (PD) and a quantum dot light-emitting diode (QLED) are back-to-back connected, is a promising candidate for low-cost infrared imaging.
Jiao Jiao Liu, Xinxin Yang, Qiulei Xu, Ruiguang Chang, Zhenghui Wu, Huaibin Shen   +5 more
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Efficient Quantum Dot Light-Emitting Diode Enabled by a Thick Inorganic CdS Interfacial Modification Layer [PDF]

, 2023
Ultrathin (∼10 nm) insulating polymer films are commonly employed as an interfacial modification layer (IML) to improve charge balance and suppress interfacial exciton quenching in quantum dot light-emitting diodes (QLEDs). However, because the thickness
Junfeng Tong (805234), Yuanyuan Wang (20181), Yonggang Liu (176004), Chunyan Yang (261158), Zhe Wang (41178), Peng Zhang (2071), Heng Zhang (320479), Chaoyu Yu (17363644), Yanfu Wan (17363647), Jianfeng Li (386792), Rui Ma (239028)   +10 more
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