Results 41 to 50 of about 284 (137)

Blue‐Emitting ZnSe(Te) Quantum Dots and Light‐Emitting Diodes

Advanced Science, Volume 13, Issue 36, 29 June 2026.
 . ABSTRACT Zn‐based quantum dots (QDs) have been regarded as the most promising Cd‐free candidates for blue‐emitting applications. ZnSe QDs exhibit an ultra‐narrow full width at half maximum (FWHM), high photoluminescence quantum yield (PLQY), and excellent environmental stability, making them ideal for blue‐violet emitters.
Lijin Wang, Aiwei Tang, Jingbi You
wiley   +1 more source

Beyond OLED: Efficient Quantum Dot Light‐Emitting Diodes for Display and Lighting Application [PDF]

, 2019
The unique features of solution-processed quantum dots (QDs) including emission tunability in the visible range, high-quality saturated color and outstanding intrinsic stability in environment are highly desired in various application fields. Especially,
Xiao Wei Sun, Yizhe Sun, Jiang, Yibin, Yibin Jiang, Zhang, Shengdong, Sun, Yizhe, Chen, Shuming, Shuming Chen, Shengdong Zhang, Sun, Xiao Wei   +9 more
core   +1 more source

Controllable photoelectric dual-output artificial light-emitting synapse device

Gongneng cailiao yu qijian xuebao
Artificial synapse devices serve as a critical hardware foundation for neuromorphic computing. However, traditional devices predominantly rely on single electrical regulation, which limits the intuitive acquisition of synaptic weights and lacks ...
Jiajun XIONG, Gengxu CHEN
doaj   +1 more source

Synthesis of Tris(Dimethylamino)Phosphine‐Based InP Quantum Dots and Their Application in Light‐Emitting Diodes: Progress and Perspectives

Exploration, Volume 6, Issue 3, June 2026.
A lot of subtle but key tricks in the synthesis of (DMA)3P‐based InP QDs and device mechanisms were not explicitly explained in the published works. This review firstly provides a comprehensive analysis of the molecular structures and distinct reaction mechanisms of (TMS)3P and (DMA)3P during InP core nucleation.
Zifeng Zhang, Jilin Deng, Qiulei Xu, Zhenghui Wu, Yanbing Lv, Baocheng Yang, Haiyang Li, Fei Chen, Huaibin Shen   +8 more
wiley   +1 more source

Hybrid Liquid Metal Cathode Enables High‐Performance Intrinsically Stretchable OLEDs

Advanced Materials, Volume 38, Issue 25, 4 May 2026.
We report a hybrid liquid metal (Hyb‐LM) cathode engineered via selective rupture of liquid metal particles (LMPs), forming a bilayer architecture with a surface liquid metal (LM) layer and underlying LMP layer, which has benefits of both LM and LMPs.
Wonbeom Lee, Wei Liu, Cheng Zhang, Seungmin Shin, Jaejun Lee, Jaedong Jang, Sanggil Park, Seungbum Hong, Sihong Wang, Himchan Cho   +9 more
wiley   +1 more source

Inverted Device Architecture for Enhanced Performance of Flexible Silicon Quantum Dot Light-Emitting Diode [PDF]

, 2018
Here we report for the first time highly flexible quantum dot light-emitting diodes (QLEDs), in which a layer of red-emitting colloidal silicon quantum dots (SiQDs) works as the optically active component, by replacing a rigid glass substrate with a thin
Batu Ghosh, Naoto Shirahata, İrem Nur Gamze Özbilgin (5724140), Batu Ghosh (1292607), Naoto Shirahata (1292598), İrem Nur Gamze Özbilgin, Shanmugavel Chinnathambi (3627449), Shanmugavel Chinnathambi, Hiroyuki Yamada, Hiroyuki Yamada (247850)   +9 more
core   +3 more sources

Research Progress and Applications of Non‐Carrier‐Injection Electroluminescence

Advanced Electronic Materials, Volume 12, Issue 10, 25 May 2026.
Non‐carrier‐injection electroluminescence (NCI‐EL) uses AC fields and displacement currents to trigger light from internal charge reservoirs, enabling minimalist emitters with remotely coupled terminals. This review maps shared mechanisms across organics, GaN, quantum dots, and TMDCs, compares planar, interdigital, single‐terminal, and coaxial designs,
Wei Huang, Jianbi Le, Rong Chen, Zhixian Lin, Xiongtu Zhou, Yongai Zhang, Chaoxing Wu   +6 more
wiley   +1 more source

30.1: Invited Paper: Strategies towards Enhancing Device Lifetime of Quantum‐Dot Light‐Emitting Diodes (QLEDs) [PDF]

SID Symposium Digest of Technical Papers, 2021
Yixing Yang, Wenyong Liu, Longjia Wu, Zizhe Lu, Yiran Yan, Xiaolin Yan   +5 more
openaire   +1 more source

A Review of Transient Characterization Techniques for Quantum Dot Light‐Emitting Diodes

Advanced Physics Research, Volume 5, Issue 5, May 2026.
This review surveys transient characterization techniques for quantum dot light‐emitting diodes, including TRPL, TREL, TA, and E‐TA. These methods resolve carrier‐selective dynamics across multiple time scales, enabling direct analysis of charge injection, exciton formation and recombination, efficiency roll‐off, and device degradation.
Jaekwon Kim, Yeongmin Moon, Soojeong Yim, Hee Won Son, Hayeon Seo, Jeonghun Kwak   +5 more
wiley   +1 more source

Intense Light Treatment of Inkjet‐Printed Metal Oxide Hole Injection Layer for Quantum Dot Light‐Emitting Diodes

Journal of the Society for Information Display, Volume 34, Issue 5, Page 335-342, May 2026.
An intense pulsed light (IPL) process enables low‐temperature activation of inkjet‐printed MoOX hole injection layers while preserving the hydrophobicity of pixel defining layers (PDLs). This approach overcomes process incompatibility in multilayer inkjet‐printed QLEDs, achieving uniform thin‐film morphology and stable pixel patterning.
Jae Yeong Jeong, Seok Hwan Jang, Jin Hong Park, Sung Jun Park, Jaebum Jeong, Beomgyu Kim, Sunghyun Park, Heesun Yang, Jun Young Kim   +8 more
wiley   +1 more source