Results 81 to 90 of about 16,365 (265)

Anomalies in the Conduction Edge of Quantum Wires [PDF]

, 2001
We study the conductance threshold of clean nearly straight quantum wires in which an electron is bound. We show that such a system exhibits spin-dependent conductance structures on the rising edge to the first conductance plateau, one near 0.25(2e^2/h), related to a singlet resonance, and one near 0.75(2e^2/h), related to a triplet resonance.
Rejec, T., Ramsak, A., Jefferson, J. H.
openaire   +2 more sources

Memristor‐Driven Active‐Matrix Organic Light‐Emitting Diode for Energy Efficient and High‐Resolution Displays

Advanced Functional Materials, EarlyView.
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim, Nahyun Kim, Seok Hee Hong, Ho Jin Lee, Jin Suk Oh, Jae Seong Park, Tae Geun Kim   +6 more
wiley   +1 more source

The role of carbon contamination in metallic nanowires

Materials Research, 2004
Metallic nanowires have attracted much attention in the last years due to new phenomena such as quantum conductance and the existence of unexpected long interatomic distances attaining 0.3-0.5 nm.
Douglas Soares Galvão, Varlei Rodrigues, Daniel Ugarte, Sergio Benites Legoas   +3 more
doaj   +1 more source

Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering. [PDF]

Nanoscale Res Lett, 2022
Ismail M, Mahata C, Kang M, Kim S.
europepmc   +1 more source

Rationally Designed Bilayer Passivation Strategy for High‐Performance Vacuum‐Processed Perovskite Solar Cells

Advanced Functional Materials, EarlyView.
A bilayer “Anchor‐and‐Seal” passivation strategy using EDAI2 and 4MeO‐PEAI effectively mitigates surface defects in vacuum‐processed perovskite films through synergistic hydrogen bonding and Lewis base coordination. This approach optimizes interfacial energy alignment and suppresses non‐radiative recombination, enabling vacuum‐deposited p‐i‐n ...
Mohammadhossein Kohan, Sang‐Heon Lee, Jaswinder Singh, Sung‐Nam Kwon, Seok‐In Na   +4 more
wiley   +1 more source

Universal Short-Time Conductance Behavior Emerges between Two Adjacent Reservoirs

Condensed Matter
When a shutter, which differentiates between two adjacent particles’ reservoirs with a voltage gap, is lifted, a current emerges. In this paper, the temporal dynamics of this emerging current is analyzed.
Er’el Granot
doaj   +1 more source

Electromechanical Properties of Small Transition-Metal Dichalcogenide Nanotubes

Inorganics, 2014
Transition-metal dichalcogenide nanotubes (TMC-NTs) are investigated for their electromechanical properties under applied tensile strain using density functional-based methods.
Nourdine Zibouche, Mahdi Ghorbani-Asl, Thomas Heine, Agnieszka Kuc   +3 more
doaj   +1 more source

Universal conductance dips and fractional excitations in a two-subband quantum wire

Physical Review Research, 2020
We theoretically investigate a quasi-one-dimensional quantum wire, where the lowest two subbands are populated, in the presence of a helical magnetic field.
Chen-Hsuan Hsu, Flavio Ronetti, Peter Stano, Jelena Klinovaja, Daniel Loss   +4 more
doaj   +1 more source

Orbital Geometry‐Governed Response of Pressure‐Tunable Quantum Defects in hBN

Advanced Functional Materials, EarlyView.
Defects in hBN act as ultrasensitive quantum manometers when the energy of the intradefect optical transitions is modified by lattice compression. The orbital geometry of the electron wave functions governs how electron hopping and Coulomb interactions react uniquely to the reduction of the van der Waals gap and in‐plane compression, leading to robust ...
Magdalena Grzeszczyk, Danis I. Badrtdinov, Kenji Watanabe, Takashi Taniguchi, Cyrus E. Dreyer, Malte Rösner, Maciej Koperski   +6 more
wiley   +1 more source

Quantized Conductance and Multilevel Memory Operation in Mn3O4 Nanowire Network Devices Combined with Low Voltage Operation and Oxygen Vacancy Induced Resistive Switching

Advanced Electronic Materials
Quantum effects in nanowires and nanodevices can potentially revolutionize the device concepts with multi‐functionalities for future technologies. Memristive devices which undergo transition from high resistance state to low resistance state involve ...
Keval Hadiyal, Ramakrishnan Ganesan, R. Thamankar   +2 more
doaj   +1 more source