Results 1 to 10 of about 8,079 (117)

Exceeding 30% Efficiency of Red Perovskite Quantum Dot Light-Emitting Diodes via Interparticle Energy Dissipation Suppression [PDF]

open access: yesNano-Micro Letters
Highlights A new quantum dot (QD) films with negligible redshift of photoluminescence spectra after film fabrication from QD solution. An electron barrier around QDs realized by adopting ligands with concentrated electron distribution.
Zhiwei Yao   +7 more
doaj   +2 more sources

Enhancement of Quantum Dot Fluorescence by a Metal Nanoparticle/Porous Silicon Microcavity Hybrid System [PDF]

open access: yesEPJ Web of Conferences, 2023
Enhancement of quantum dot (QD) fluorescence in a hybrid system of a porous silicon microcavity (pSiMC) and silver nanoplatelets (AgNPs) has been estimated using numerical simulation.
Granizo Evelyn   +3 more
doaj   +1 more source

Double quantum dots in atomically-precise graphene nanoribbons

open access: yesMaterials for Quantum Technology, 2023
Bottom-up synthesized graphene nanoribbons (GNRs) are precise quantum materials, offering a high degree of tunability of their physical properties. While field-effect transistors and single quantum dot (QD) devices have been reported, the fabrication of ...
Jian Zhang   +9 more
doaj   +1 more source

Modeling electronic and optical properties of III–V quantum dots—selected recent developments

open access: yesLight: Science & Applications, 2022
Electronic properties of selected quantum dot (QD) systems are surveyed based on the multi-band k·p method, which we benchmark by direct comparison to the empirical tight-binding algorithm, and we also discuss the newly developed “linear combination of ...
Alexander Mittelstädt   +2 more
doaj   +1 more source

Device Modeling of Quantum Dot–Organic Light Emitting Diodes for High Green Color Purity

open access: yesApplied Sciences, 2021
In this study, the optimal structure for obtaining high green color purity was investigated by modeling quantum dot (QD)–organic light-emitting diodes (OLED).
Byoung-Seong Jeong
doaj   +1 more source

Study the energy states and absorption coefficients of quantum dots and quantum anti-dots with hydrogenic impurity under the applied magnetic field [PDF]

open access: yesJournal of Optoelectronical Nanostructures, 2022
In this work, the effect of magnetic field onelectronic spectra and absorption coefficient of 𝐺𝑎𝐴𝑠/𝐺𝑎1−𝑥 𝐴𝑙𝑥𝐴𝑠 spherical quantum dot (QD) and𝐺𝑎1−𝑥 𝐴𝑙𝑥𝐴𝑠/𝐺𝑎𝐴𝑠 spherical quantum anti-dot (QAD)with hydrogenic impurity are reported both theoreticallyand ...
Fatemeh Rahimi   +3 more
doaj   +1 more source

Binding energy in tuned quantum dots under an external magnetic field [PDF]

open access: yesJournal of Optoelectronical Nanostructures, 2022
The binding energy of a tuned quantum dot (QD) under an external magnetic field have been theoretically investigated. For this goal, the Schrödinger equation is analytically solved without and with considering the impurity term and the energy eigenvalues
Mojtaba Servatkhah   +2 more
doaj   +1 more source

External-quantum-efficiency enhancement in quantum-dot solar cells with a Fabry–Perot light-trapping structure

open access: yesHeliyon, 2023
In this work, we have experimentally investigated the impact of light trapping on the performance of InAs/GaAs quantum dot (QD) solar cells. To increase the amount of absorbed near-infrared photons, we fabricated a thin-film QD solar cell with a backside
Yusuke Oteki, Yoshitaka Okada
doaj   +1 more source

Modelling charge transport and electro-optical characteristics of quantum dot light-emitting diodes

open access: yesnpj Computational Materials, 2021
s Quantum dot light-emitting diodes (QD-LEDs) are considered as competitive candidate for next-generation displays or lightings. Recent advances in the synthesis of core/shell quantum dots (QDs) and tailoring procedures for achieving their high quantum ...
Sung-Min Jung   +16 more
doaj   +1 more source

Design and Simulation of Two Bits Single-electron Logic Circuit using Double Quantum Dot Single Electron Transistor

open access: yesInternational Journal of Technology, 2014
Electrons in a single electron transistor (SET) are transported one by one from source to drain based on the coulomb blockade mechanism. The transport rate is sensitively influenced by the presence of event a single electron charge located near the ...
Arief Udhiarto   +3 more
doaj   +1 more source

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